5秒后页面跳转
PD45128441G5-A75LI-9JF PDF预览

PD45128441G5-A75LI-9JF

更新时间: 2024-11-23 22:18:27
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器
页数 文件大小 规格书
89页 696K
描述
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

PD45128441G5-A75LI-9JF 数据手册

 浏览型号PD45128441G5-A75LI-9JF的Datasheet PDF文件第2页浏览型号PD45128441G5-A75LI-9JF的Datasheet PDF文件第3页浏览型号PD45128441G5-A75LI-9JF的Datasheet PDF文件第4页浏览型号PD45128441G5-A75LI-9JF的Datasheet PDF文件第5页浏览型号PD45128441G5-A75LI-9JF的Datasheet PDF文件第6页浏览型号PD45128441G5-A75LI-9JF的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
MOS INTEGRATED CIRCUIT  
µPD45128441-I, 45128841-I, 45128163-I  
128M-bit Synchronous DRAM  
4-bank, LVTTL  
WTR (Wide Temperature Range)  
Description  
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access  
memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively.  
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.  
All inputs and outputs are synchronized with the positive edge of the clock.  
The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).  
These products are packaged in 54-pin TSOP (II).  
Features  
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
Pulsed interface  
Possible to assert random column address in every cycle  
Quad internal banks controlled by BA0(A13) and BA1(A12)  
Byte control (×16) by LDQM and UDQM  
Programmable Wrap sequence (Sequential / Interleave)  
Programmable burst length (1, 2, 4, 8 and full page)  
Programmable /CAS latency (2 and 3)  
Ambient temperature (TA): 40 to + 85°C  
Automatic precharge and controlled precharge  
CBR (Auto) refresh and self refresh  
• ×4, ×8, ×16 organization  
Single 3.3 V ± 0.3 V power supply  
LVTTL compatible inputs and outputs  
4,096 refresh cycles / 64 ms  
Burst termination by Burst stop command and Precharge command  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for  
availability and additional information.  
Document No. E0233N10 (Ver. 1.0)  
Date Published November 2001 (K) Japa  
C
Elpida Memory, Inc. 2001  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

与PD45128441G5-A75LI-9JF相关器件

型号 品牌 获取价格 描述 数据表
PD45128441G5-A75LT-9JF ELPIDA

获取价格

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
PD45128441G5-A75T-9JF ELPIDA

获取价格

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
PD45128441G5-A80I-9JF ELPIDA

获取价格

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
PD45128441G5-A80LI-9JF ELPIDA

获取价格

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
PD45128441G5-A80LT-9JF ELPIDA

获取价格

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
PD45128441G5-A80T-9JF ELPIDA

获取价格

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
PD45128441-I ELPIDA

获取价格

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
PD45128441-T ELPIDA

获取价格

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
PD45128841G5-A10I-9JF ELPIDA

获取价格

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
PD45128841G5-A10LI-9JF ELPIDA

获取价格

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)