Datasheet > PBSS304PX-Q

PBSS304PX-Q

更新时间： 2024-03-03 10:10:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	298K
描述
60 V, 4.2 A PNP low VCEsat transistorProduction

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PBSS304PX-Q 数据手册

PBSS304PX-Q

60 V, 4.2 A PNP low VCEsat transistor

9 November 2023

Product data sheet

1. General description

PNP low V_CEsattransistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device

(SMD) plastic package.

NPN complement: PBSS304NX

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High collector current capability I_Cand I_CM

High collector current gain (hFE) at high I_C

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-voltage DC-to-DC conversion

High-voltage MOSFET gate driving

High-voltage motor control

High-voltage power switches (e.g. motors, fans)

Automotive applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-60

I_C

collector current

-4.2

-8.4

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

saturation resistance

I_C= -4 A; I_B= -200 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

mΩ

12 3 4 5 6 7...13

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