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PBL403 PDF预览

PBL403

更新时间: 2024-01-09 19:52:51
品牌 Logo 应用领域
美台 - DIODES 整流二极管桥式整流二极管
页数 文件大小 规格书
2页 70K
描述
4.0A BRIDGE RECTIFIER

PBL403 技术参数

生命周期:Obsolete包装说明:R-PSIP-W4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.52其他特性:UL RECOGNIZED
最小击穿电压:200 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSIP-W4
最大非重复峰值正向电流:150 A元件数量:4
相数:1端子数量:4
最高工作温度:125 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:SINGLEBase Number Matches:1

PBL403 数据手册

 浏览型号PBL403的Datasheet PDF文件第2页 
PBL401 - PBL407  
4.0A BRIDGE RECTIFIER  
DESIGN  
NEW  
FOR  
RECOMMENDED  
NOT  
Features  
- GBU410  
GBU4005  
USE  
·
·
High Case Dielectric Strength of 1500V  
Low Forward Voltage Drop, High Current  
Capability  
A
·
·
·
Surge Overload Rating to 150A Peak  
Ideal for Printed Circuit Board Application  
PBL  
Plastic Material - UL Flammability  
Classification 94V-0  
Dim  
A
Min  
18.50  
15.40  
19.00  
6.20  
Max  
19.50  
16.40  
B
·
UL Listed Under Recognized Component Index,  
File Number E95060  
-
+
B
C
H
C
D
D
6.50  
5.60  
2.00  
E
4.60  
Mechanical Data  
G
1.50  
·
·
Case: Molded Plastic  
H
1.30 Typical  
G
Terminals: Plated Leads, Solderable per  
MIL-STD-202, Method 208  
All Dimensions in mm  
·
·
·
Polarity: Symbols Marked on Case  
Approx. Weight: 5.6 grams  
Marking: Type Number  
E
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
PBL  
401  
PBL  
402  
PBL  
403  
PBL  
404  
PBL  
405  
PBL  
406  
PBL  
407  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
RMS Reverse Voltage  
35  
280  
4.0  
V
A
Average Rectified Output Current  
@ TC= 75°C  
IO  
Non-Repetitive Peak Forward Surge Current, 8.3 ms single  
half-sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
150  
1.1  
A
V
Forward Voltage per element  
@ IF = 3.0A  
VFM  
IR  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@TC = 25°C  
@ TC = 100°C  
10  
1.0  
µA  
mA  
I2t Rating for Fusing (t < 8.3ms) (Note 2)  
I2t  
166  
19  
A2s  
°C/W  
°C  
RqJC  
Typical Thermal Resistance, Junction to Case (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +125  
Notes:  
1. Thermal resistance rom junction to case per element mounted on PC board with 13 x 13 x 0.03mm land areas.  
2. Non-repetitive for t > 1ms and < 8.3ms.  
DS21305 Rev. E-3  
1 of 2  
PBL401-PBL407  

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