Datasheet > PA5S6JA

PA5S6JA

更新时间： 2024-09-16 17:15:47

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	353K
描述
SOT-23-6

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中文翻译

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数据手册

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PA5S6JA 数据手册

PA5S6JA

NIKO-SEM

Dual N-Channel Logic Level MOSFET

SOT-23-6

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

30V

R_DS(ON)

I_D

0.75A

450mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• Products Integrated ESD diode with ESD Protected up to 2KV.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

• Space Limit & Smart Devices Applications.

G: GATE

D: DRAIN

S: SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

±12

UNITS

V_GS

T_A= 25 °C

T_A= 70 °C

0.75

Continuous Drain Current²

Pulsed Drain Current¹

Power Dissipation

I_D

I_DM

0.6

1.6

T_A= 25 °C

T_A= 70 °C

0.5

P_D

°C

0.32

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient³

SYMBOL

R_JA

TYPICAL

MAXIMUM

250

UNITS

°C / W

¹Limited by maximum junction temperature.

²Limited by package.

³The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

M-43-3

REV 1.0

12 3 4

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