Datasheet > PA567JA

PA567JA

更新时间： 2024-10-04 17:15:19

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	268K
描述
SOT-23-6

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中文翻译

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数据手册

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PA567JA 数据手册

Dual P-Channel Logic Level

Enhancement Mode Field Effect

PA567JA

SOT-23-6

NIKO-SEM

Transistor

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-20V

R_DS(ON)

I_D

-0.68A

520mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• ESD Protection − HBM Class : 1C.

Applications

G: GATE

D: DRAIN

S: SOURCE

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

• Space Limit & Smart Devices Applications.

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

±12

UNITS

V_GS

T_A= 25 °C

T_A= 70 °C

-0.68

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation

I_D

I_DM

-0.54

-2.1

T_A= 25 °C

T_A= 70 °C

0.41

P_D

0.26

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

SYMBOL

R_JA

TYPICAL

MAXIMUM

300

UNITS

°C/W

Steady-State

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper.

I-27-2

REV1.2

12 3 4

中文翻译

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