Datasheet > PA5D8EA

PA5D8EA

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	261K
描述
SOT-23-6

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中文翻译

获取价格

数据手册

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PA5D8EA 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PA5D8EA

NIKO-SEM

SOT-23-6

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

20V

R_DS(ON)

I_D

0.96A

300mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• ESD Protection − HBM Class : 1C.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

• Space Limit & Smart Devices Applications.

G: GATE

D: DRAIN

S: SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

±10

UNITS

V_GS

T_A= 25 °C

T_A= 70 °C

0.96

Continuous Drain Current²

Pulsed Drain Current^1,2

Power Dissipation

I_D

I_DM

0.76

T_A= 25 °C

T_A= 70 °C

0.49

P_D

°C

0.31

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JA

TYPICAL

MAXIMUM

251

UNITS

°C / W

Junction-to-Ambient

¹Limited by maximum junction temperature.

²Limited by package.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V_(BR)DSS

V_GS(th)

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

0.4 0.7

I-27-1

REV 1.2

12 3 4

中文翻译

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