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PA28F800BV-T120 PDF预览

PA28F800BV-T120

更新时间: 2024-11-14 15:47:27
品牌 Logo 应用领域
英特尔 - INTEL 光电二极管内存集成电路
页数 文件大小 规格书
77页 555K
描述
Flash, 1MX8, 150ns, PDSO44, 0.525 X 1.110 INCH, PLASTIC, SOP-44

PA28F800BV-T120 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.525 X 1.110 INCH, PLASTIC, SOP-44
针数:44Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.91最长访问时间:150 ns
其他特性:CAN BE OPERATED IN 4.5V TO 5.5V; CAN BE CONFG AS 512K X 16; TOP BOOT BLOCK备用内存宽度:8
启动块:TOP命令用户界面:YES
数据轮询:NO耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:28.2 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,7
端子数量:44字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP44,.63封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:3.3/5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:2.95 mm
部门规模:16K,8K,96K,128K最大待机电流:0.000008 A
子类别:Flash Memories最大压摆率:0.065 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:MOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
切换位:NO类型:NOR TYPE
宽度:13.3 mmBase Number Matches:1

PA28F800BV-T120 数据手册

 浏览型号PA28F800BV-T120的Datasheet PDF文件第2页浏览型号PA28F800BV-T120的Datasheet PDF文件第3页浏览型号PA28F800BV-T120的Datasheet PDF文件第4页浏览型号PA28F800BV-T120的Datasheet PDF文件第5页浏览型号PA28F800BV-T120的Datasheet PDF文件第6页浏览型号PA28F800BV-T120的Datasheet PDF文件第7页 
PRODUCT PREVIEW  
E
8-MBIT (512K X 16, 1024K X 8)  
SmartVoltage BOOT BLOCK  
FLASH MEMORY FAMILY  
28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B  
28F800CE-T/B, 28F008BE-T/B  
Intel SmartVoltage Technology  
Extended Cycling Capability  
¾
¾
¾
5V or 12V Program/Erase  
2.7V, 3.3V or 5V Read Operation  
Program Time Reduced 60% at  
12V VPP  
¾
100,000 Block Erase Cycles  
(Commercial Temperature)  
10,000 Block Erase Cycles  
(Extended Temperature)  
¾
Very High Performance Read  
Automated Word/Byte Write and Block  
Erase  
¾
¾
¾
5V: 70/120 ns Max. Access Time,  
30/40 ns Max. Output Enable Time  
3V: 120/150 ns Max Access  
65 ns Max. Output Enable Time  
2.7V: 120 ns Max Access  
¾
Industry-Standard Command User  
Interface  
¾
¾
Status Registers  
Erase Suspend Capability  
65 ns Max. Output Enable Time  
SRAM-Compatible Write Interface  
Low Power Consumption  
Automatic Power Savings Feature  
¾
Max 60 mA Read Current at 5V  
¾
1 mA Typical ICC Active Current in  
Static Operation  
¾
Max 30 mA Read Current at 2.7–3.6V  
x8/x16-Selectable Input/Output Bus  
Reset/Deep Power-Down Input  
¾
28F800 for High Performance 16- or  
32-bit CPUs  
¾
0.2 µA ICCTypical  
¾
Provides Reset for Boot Operations  
x8-Only Input/Output Architecture  
Hardware Data Protection Feature  
¾
28F008B for Space-Constrained  
8-bit Applications  
¾
Erase/Write Lockout during Power  
Transitions  
Optimized Array Blocking Architecture  
Industry-Standard Surface Mount  
Packaging  
¾
¾
¾
¾
¾
One 16-KB Protected Boot Block  
Two 8-KB Parameter Blocks  
One 96-KB Main Block  
Seven 128-KB Main Blocks  
Top or Bottom Boot Locations  
¾
40-Lead TSOP  
¾
44-Lead PSOP: JEDEC ROM  
Compatible  
¾
48-Lead TSOP  
Absolute Hardware-Protection for Boot  
Block  
Footprint Upgradeable from 2-Mbit and  
4-Mbit Boot Block Flash Memories  
Software EEPROM Emulation with  
Parameter Blocks  
ETOX™ IV Flash Technology  
Extended Temperature Operation  
¾ –40°C to +85°C  
Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any  
patent or copyright, for sale and use of Intel products except as provided in Intel's Terms and Conditions of Sale for such products. Information  
contained herein supersedes previously published specifications on these devices from Intel.  
© INTEL CORPORATION 1995  
September 1995  
Order Number: 290539-002  

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