Datasheet > P8010HK

P8010HK

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
4页	280K
描述
PDFN 5x6

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中文翻译

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数据手册

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P8010HK 数据手册

Dual N-Channel Enhancement Mode

Field Effect Transistor

P8010HK

NIKO-SEM

PDFN 5x6P

Halogen-Free & Lead-Free

PRODUCT SUMMARY

D1 D1 D2 D2

V_(BR)DSS

100V

R_DS(ON)

I_D

11A

85mΩ

G. GATE

D. DRAIN

S. SOURCE

S1 G1 S2

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

100

±20

UNITS

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

Pulsed Drain Current¹

Continuous Drain Current

I_D

I_DM

I_D

T_C= 100 °C

7.2

T_A= 25 °C

T_A= 70 °C

2.9

2.3

8.8

38.7

Avalanche Current

Avalanche Energy

I_AS

L = 1mH

E_AS

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Power Dissipation

P_D

1.7

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

Junction-to-Case

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C / W

R_JA

R_JC

4.8

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

J-38-5

REV 1.1

12 3 4

中文翻译

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