Datasheet > P791_07

P791_07

更新时间： 2024-11-18 03:43:39

品牌	Logo	应用领域
HAMAMATSU		光电
页数	文件大小	规格书
4页	93K
描述
PbSe photoconductive detector

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中文翻译

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数据手册

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P791_07 数据手册

I N F R A R E D D E T E C T O R

PbSe photoconductive detector

P791/P2038/P2680 series, P3207-05

Detection capability up 5 µm range (TE-cooled type)

Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled

types. Cooled type PbSe photoconductive cells offer higher sensitivity and improved S/N, and are widely used in precision photometry such as in

analytical instruments.

Features

Applications

High-speed response

Room temperature operation

Radiation thermometer

Flame detector

Compared to other types of detectors used in the same

wavelength range, PbSe cells have higher response

speed and can also operate at room temperature,

making them useful in a wide range of applications

such as gas analyzers, etc.

Gas analyzer

Film thickness gauge

Lower temperature detection limit: 50 ˚C approx.

Accessories (Optional)

Heatsink for one-stage TE-cooled type

Heatsink for two-stage TE-cooled type

Temperature controller for TE-cooled type

A3179

A3179-01

C1103-04

Preamplifier for PbS/PbSe photoconductive detector C3757-02

Infrared detector module with preamp Non-cooled type P4245

Cooled type

P4639

ꢀ Specification / Absolute maximum ratings

Absolute maximum ratings

Active Thermistor

area resistance

Thermistor TE-cooler

Operating Storage

Type No.

^{Di mensional}Package Cooling

outline

Supply

voltage

temperature temperature

power

current

dissipation dissipation

Topr

(°C)

Tstg

(°C)

(mm)

2 × 2

(mW)

(A)

(V)

(kΩ)

P791-11

P791-13

ꢀ

TO-5 Non-cooled 3 × 3

2 × 2

ꢀ

P3207-05

P2038-02

P2038-03

P2680-02

P2680-03

2 × 2

3 × 3

2 × 2

3 × 3

100

-30 to +50 -55 to +60

One-stage

TE-cooled

Two-stage

TE-cooled

1.5

1.0

TO-8

0.2

ꢀ

ꢀ Electrical and optical characteristics (Typ. unless otherwise noted)

Measurement

condition

Element

temperature

Peak

sensitivity

wavelength

Photo sensitivity

S *²

Cut-off

Rise time

0 to 63 %

Dark

wavelength

resistance

λ=λp

Vs=15 V

(500, 600, 1)

(λp, 600, 1)

λc

Type No.

λp

Min.

(V/W)

Typ.

(V/W)

Min.

Typ.

Max.

(µs)

(cm· Hz^1/2/W) (cm· Hz^1/2/W) (cm· Hz^1/2/W)

(°C)

(µm)

4.0

(µm)

4.8

(MΩ)

P791-11

7 × 10²1 × 10³

3 × 10²5 × 10²

7 × 10²1 × 10³

2.2 × 10³3 × 10³

1 × 10³1.3 × 10³

2.7 × 10³4 × 10³

1.2 × 10³2 × 10³

5 × 10⁷

1 × 10⁸

1 × 10⁹

8 × 10⁸

3 × 10⁹

P791-13

0.3 to 1.5

P3207-05 *¹

P2038-02

P2038-03

P2680-02

P2680-03

4.3

-10

-20

4.1

5.1

5.2

1 × 10⁸

3 × 10⁸

1.7 to 7.0

1.8 to 8.0

4.2

2 × 10⁸

4 × 10⁸

4 × 10⁹

*1: Half width 400 nm

*2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance

12 3 4

中文翻译

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P791-11	HAMAMATSU	获取价格	PbSe photoconductive detector
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