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P6SMBJ48C-T3-LF PDF预览

P6SMBJ48C-T3-LF

更新时间： 2024-11-23 20:40:43
品牌 Logo 应用领域
WTE 局域网光电二极管
页数 文件大小 规格书
6页 98K
描述
Trans Voltage Suppressor Diode, 600W, 48V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

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P6SMBJ48C-T3-LF 数据手册

 浏览型号P6SMBJ48C-T3-LF的Datasheet PDF文件第2页浏览型号P6SMBJ48C-T3-LF的Datasheet PDF文件第3页浏览型号P6SMBJ48C-T3-LF的Datasheet PDF文件第4页浏览型号P6SMBJ48C-T3-LF的Datasheet PDF文件第5页浏览型号P6SMBJ48C-T3-LF的Datasheet PDF文件第6页 
WTE  
POWER SEMICONDUCTORS  
P6SMBJ SERIES  
600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR  
Features  
ꢀ
Glass Passivated Die Construction  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
600W Peak Pulse Power Dissipation  
5.0V – 170V Standoff Voltage  
Uni- and Bi-Directional Versions Available  
Excellent Clamping Capability  
Fast Response Time  
B
D
A
F
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
C
H
G
E
SMB/DO-214AA  
Min  
Mechanical Data  
Dim  
A
Max  
3.94  
4.70  
2.11  
ꢀ
Case: SMB/DO-214AA, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
3.30  
ꢀ
B
4.06  
C
1.91  
ꢀ
ꢀ
ꢀ
ꢀ
Polarity: Cathode Band Except Bi-Directional  
Marking: Device Code  
Weight: 0.093 grams (approx.)  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 6  
D
0.152  
5.08  
0.305  
5.59  
2.44  
0.203  
1.27  
E
F
2.13  
G
H
0.051  
0.76  
All Dimensions in mm  
“C” Suffix Designates Bi-directional Devices  
“A” Suffix Designates 5% Tolerance Devices  
No Suffix Designates 10% Tolerance Devices  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
600 Minimum  
See Table 1  
5.0  
Unit  
W
Peak Pulse Power Dissipation 10/1000µS Waveform (Note 1, 2) Figure 3  
Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 4  
Steady State Power Dissipation (Note 4)  
PPPM  
IPPM  
A
PM(AV)  
W
Peak Forward Surge Current 8.3ms Single Half Sine-Wave  
Superimposed on Rated Load (JEDEC Method) (Note 2, 3)  
IFSM  
100  
A
Typical Thermal Resistance ,Junction to Lead (Note 5)  
Typical Thermal Resistance, Junction to Ambient (Note 5)  
Operating and Storage Temperature Range  
RθJL  
RθJA  
20  
100  
°C/W  
°C/W  
°C  
Tj, TSTG  
-55 to +150  
Note: 1. Non-repetitive current pulse per Figure 4 and derated above TA = 25°C per Figure 1.  
2. Mounted on 5.0mm2 (0.013mm thick) land area.  
3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.  
4. Lead temperature at 75°C.  
5. Mounted on minimum recommended pad layout.  
P6SMBJ SERIES  
1 of 6  
© 2006 Won-Top Electronics  
123456

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