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P6SMBJ350A PDF预览

P6SMBJ350A

更新时间： 2024-02-12 13:50:54
品牌 Logo 应用领域
THINKISEMI 二极管光电二极管局域网
页数 文件大小 规格书
3页 932K
描述
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

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中文翻译

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P6SMBJ350A 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DO-214AA包装说明：R-PDSO-C2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.74最大击穿电压：368 V
最小击穿电压：332 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e0最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性：BIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：300 V表面贴装：YES
技术：AVALANCHE端子面层：TIN LEAD
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：30

P6SMBJ350A 数据手册

 浏览型号P6SMBJ350A的Datasheet PDF文件第2页浏览型号P6SMBJ350A的Datasheet PDF文件第3页 
FMG31S thru FMG36S  
FMG31S/FMG32S/FMG33S/FMG34S/FMG35S/FMG36S  
Pb Free Plating Product  
20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers  
TO-3PN  
Features  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
Bottom Side Metal Heat Sink  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,Motor Control,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
Mechanical Data  
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-3PN open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Case  
Case  
Case  
Case  
Series  
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 0.61 gram approximately  
Doubler  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "UR"  
Negative  
Positive  
Suffix "S"  
Suffix "R"  
Suffix "U"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
℃
Rating at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
FMG33S  
FMG35S  
FMG31S  
FMG32S  
UNIT  
SYMBOL  
FMG34S  
FMG36S  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
20.0  
200  
1.3  
A
A
V
IF(AV)  
℃
(Total Device 2x10A=20A)  
Current TC  
=125  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
Maximum Instantaneous Forward Voltage  
V
F
0.98  
120  
1.7  
(Per Diode/Per Leg)  
@ 10.0 A  
5.0  
100  
μA  
μA  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25  
℃
℃
I
R
J
=125  
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
C
J
70  
R
JC  
0.85  
℃
/W  
Operating Junction and Storage  
Temperature Range  
-55 to + 150  
℃
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/3  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
123

中文翻译

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