P6SMB39CAT3G

更新时间： 2024-11-26 04:08:03

品牌	Logo	应用领域
安森美 - ONSEMI		瞬态抑制器二极管光电二极管
页数	文件大小	规格书
6页	71K
描述
600 Watt Peak Power Zener Transient Voltage Suppressors

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

P6SMB39CAT3G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DO-214
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	3.52
其他特性：	HIGH RELIABILITY, UL RECOGNIZED	最大击穿电压：	41 V
最小击穿电压：	37.1 V	击穿电压标称值：	39 V
最大钳位电压：	53.9 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AA	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	600 W	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性：	BIDIRECTIONAL
最大功率耗散：	0.55 W	认证状态：	Not Qualified
最大重复峰值反向电压：	33.3 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	ZENER
端子面层：	Tin (Sn)	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

P6SMB39CAT3G 数据手册

P6SMB11CAT3 Series

600 Watt Peak Power Zener

Transient Voltage Suppressors

Bidirectional*

The SMB series is designed to protect voltage sensitive

components from high voltage, high energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. The SMB series is supplied in

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetict package and is ideally suited for use in communication

systems, automotive, numerical controls, process controls, medical

equipment, business machines, power supplies and many other

industrial/consumer applications.

http://onsemi.com

PLASTIC SURFACE MOUNT

ZENER OVERVOLTAGE

TRANSIENT SUPPRESSORS

9.4−78 VOLTS

Features

600 WATT PEAK POWER

• Working Peak Reverse Voltage Range − 9.4 to 77.8 V

• Standard Zener Breakdown Voltage Range − 11 to 91 V

• Peak Power − 600 W @ 1 ms

• ESD Rating of Class 3 (>16 KV) per Human Body Model

• Maximum Clamp Voltage @ Peak Pulse Current

• Low Leakage < 5 mA Above 10 V

• UL 497B for Isolated Loop Circuit Protection

• Response Time is Typically < 1 ns

• Pb−Free Packages are Available

SMB

CASE 403A

PLASTIC

Mechanical Characteristics:

CASE: Void-Free, Transfer-Molded, Thermosetting Plastic

FINISH: All External Surfaces are Corrosion Resistant and Leads are

Readily Solderable

MARKING DIAGRAM

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

LEADS: Modified L−Bend Providing More Contact Area to Bond Pads

POLARITY: Polarity Band Will Not be Indicated

MOUNTING POSITION: Any

AYWW

xxC G

xxC = Device Code

MAXIMUM RATINGS

= Assembly Location

= Year

Rating

Symbol Value

Unit

WW = Work Week

Peak Power Dissipation (Note 1) @ T = 25°C,

Pulse Width = 1 ms

600

= Pb−Free Package

(Note: Microdot may be in either location)

DC Power Dissipation @ T = 75°C

3.0

Measured Zero Lead Length (Note 2)

Derate Above 75°C

ORDERING INFORMATION

mW/°C

°C/W

Thermal Resistance, Junction−to−Lead

†

Device

Package

Shipping

DC Power Dissipation (Note 3) @ T = 25°C

0.55

4.4

226

mW/°C

°C/W

P6SMBxxCAT3

P6SMBxxCAT3G

SMB

2500/Tape & Reel

Derate Above 25°C

Thermal Resistance, Junction−to−Ambient

SMB

Operating and Storage Temperature Range

T , T

−65 to

+150

°C

(Pb−Free)

stg

The “T3” suffix refers to a 13 inch reel.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. 10 X 1000 ms, non−repetitive

2. 1″ square copper pad, FR−4 board

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended

choices for future use and best overall value.

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as

shown in 403A case outline dimensions spec.

*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.

Publication Order Number:

July, 2006 − Rev. 8

P6SMB11CAT3/D

12 3 4 5 6

中文翻译

下载PDF

P6SMB39CAT3G 替代型号

型号	品牌	替代类型	描述	数据表
SZP6SMB39CAT3G	ONSEMI	类似代替	600 Watt SMB Transient Voltage Suppressor, 39 V, Bidirectional 600 Watt SMB Transient Volt
P6SMB8.2AT3G	ONSEMI	类似代替	600 Watt Peak Power Zener Transient Voltage Suppressors
P6SMB39CAT3	ONSEMI	类似代替	600 Watt Peak Power Zener Transient Voltage Suppressors

与P6SMB39CAT3G相关器件

型号	品牌	获取价格	描述	数据表
P6SMB39CA-T3-LF	WTE	获取价格	Trans Voltage Suppressor Diode,
P6SMB39CATR13	CENTRAL	获取价格	Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Bidirectional, 1 Element, Silicon,
P6SMB39CATR13LEADFREE	CENTRAL	获取价格	Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Bidirectional, 1 Element, Silicon,
P6SMB39CATR13TIN/LEAD	CENTRAL	获取价格	Trans Voltage Suppressor Diode, 33.3V V(RWM), Bidirectional,
P6SMB40	ETC	获取价格
P6SMB400	SUNMATE	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE
P6SMB400	LITTELFUSE	获取价格	P6SMB系列专门设计用于保护敏感电子设备不受闪电及其他瞬态电压现象引起的瞬态电压的影响。
P6SMB400	PANJIT	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER
P6SMB400	DIOTEC	获取价格	Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
P6SMB400(C)A	GOOD-ARK	获取价格

与P6SMB39CAT3G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMB39CAT3G

P6SMB39CAT3G 技术参数

P6SMB39CAT3G 数据手册

P6SMB39CAT3G 替代型号

与P6SMB39CAT3G相关器件

与P6SMB39CAT3G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMB39CAT3G

P6SMB39CAT3G 技术参数

P6SMB39CAT3G 数据手册

P6SMB39CAT3G 替代型号

与P6SMB39CAT3G相关器件

与P6SMB39CAT3G相关文章

您还可以找

您在本页遇到什么问题？