Datasheet > P6SMB33A

P6SMB33A

更新时间： 2024-11-28 05:59:19

品牌	Logo	应用领域
威世 - VISHAY		二极管光电二极管局域网
页数	文件大小	规格书
5页	112K
描述
Surface Mount TRANSZORB® Transient Voltage Suppressors

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中文翻译

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数据手册
替代型号

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P6SMB33A 数据手册

P6SMB Series

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available inuni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

DO-214AA (SMB)

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

V_BRuni-directional

6.8 V to 540 V

6.8 V to 220 V

600 W

TYPICAL APPLICATIONS

_BRbi-directional

Use in sensitive electronics protection against voltage

transients induced by inductive load switching

and lighting on ICs, MOSFET, signal lines of

sensor units for consumer, computer, industrial and

telecommunication.

P_PPM

P_D

5.0 W

I_FSM(uni-directional only)

T_Jmax.

100 A

150 °C

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g.

P6SMB10CA).

Electrical characteristics apply in both directions.

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

600

UNIT

Peak power dissipation with a 10/1000 µs waveform ⁽¹⁾⁽²⁾(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Power dissipation on infinite heatsink T_A= 50 °C ,

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

See next table

5.0

P_D

I_FSM

100

T_J, T_STG

- 65 to + 150

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number: 88370

Revision: 21-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

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P6SMB33A 替代型号

型号	品牌	替代类型	描述	数据表
SMBJ28CA	LITTELFUSE	功能相似	Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Suppressors
SMBJ33A	LITTELFUSE	功能相似	Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Suppressors
SM6T39A	STMICROELECTRONICS	功能相似	TRANSILTM

与P6SMB33A相关器件

型号	品牌	获取价格	描述	数据表
P6SMB33A / CA	SWST	获取价格	瞬态电压抑制管
P6SMB33A/52-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
P6SMB33A/5B	VISHAY	获取价格	Transient Suppressor,
P6SMB33A??	MDD	获取价格	DO-214AA/SMB
P6SMB33A-51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
P6SMB33A-5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
P6SMB33A-AT	YAGEO	获取价格	Trans Voltage Suppressor Diode,
P6SMB33A-AT/TR7	YAGEO	获取价格	Trans Voltage Suppressor Diode,
P6SMB33A-AU	PANJIT	获取价格	SMB
P6SMB33AAUTO	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO

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