Datasheet > P6SMB200A-HE3/5B

P6SMB200A-HE3/5B

更新时间： 2024-11-22 10:03:27

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	99K
描述
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor

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P6SMB200A-HE3/5B 数据手册

P6SMB Series

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in Unidirectional and Bidirectional

• 600 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty cycle):

0.01 %

• Excellent clamping capability

DO-214AA (SMB)

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020C, LF max peak

of 260 °C

• Solder Dip 260 °C, 40 seconds

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

MAJOR RATINGS AND CHARACTERISTICS

V_(BR)Unidirectional

6.8 V to 540 V

6.8 V to 220 V

600 W

TYPICAL APPLICATIONS

_(BR)Bidirectional

Use in sensitive electronics protection against voltage

transients induced by inductive load switching

and lighting on ICs, MOSFET, signal lines of

sensor units for consumer, computer, industrial and

telecommunication.

P_PPM

P_D

5.0 W

I_FSM(Unidirectional only)

T_jmax.

100 A

150 °C

MECHANICAL DATA

Case: DO-214AA (SMB)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

DEVICES FOR BIDIRECTION APPLICATIONS

For bidirectional devices use CA suffix (e.g. P6SMB10CA).

Electrical characteristics apply in both directions.

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: For unidirectional types the band denotes

cathode end, no marking on bidirectional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

Minimum 600

see next table

5.0

UNIT

Peak power dissipation with a 10/1000 µs waveform ^(1,2)(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Power dissipation on infinite heatsink T_A= 50 °C ,

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

P_D

I_FSM

100

T_J, T_STG

- 65 to + 150

°C

Note:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number 88370

08-Sep-06

www.vishay.com

12 3 4 5

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与P6SMB200A-HE3/5B相关器件

型号	品牌	获取价格	描述	数据表
P6SMB200AHE3_A/H	VISHAY	获取价格	暂无描述
P6SMB200A-M3/52	VISHAY	获取价格	TVS DIODE 171V 274V DO214AA
P6SMB200A-M3/5B	VISHAY	获取价格	TVS DIODE 171V 274V DO214AA
P6SMB200AQ	YANGJIE	获取价格	Surface Mount Transient Voltage Suppressors
P6SMB200A-Q1	ANBON	获取价格	SMB
P6SMB200AS	PANJIT	获取价格	SMB
P6SMB200AT3	ONSEMI	获取价格	600 Watt Peak Power Zener Transient Voltage Suppressors
P6SMB200AT3G	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, 171V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB200AT3G	ONSEMI	获取价格	600 Watt Peak Power Zener Transient Voltage Suppressors
P6SMB200C	PANJIT	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

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