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P6SMB18AHE3_A/I

更新时间： 2024-11-21 19:46:31
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
5页 107K
描述
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN

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P6SMB18AHE3_A/I 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：R-PDSO-C2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：17 weeks风险等级：5.13
Is Samacsys：N其他特性：EXCELLENT CLAMPING CAPABILITY
最大击穿电压：18.9 V最小击穿电压：17.1 V
击穿电压标称值：18 V最大钳位电压：25.2 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：5 W
参考标准：AEC-Q101最大重复峰值反向电压：15.3 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：30Base Number Matches：1

P6SMB18AHE3_A/I 数据手册

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P6SMB Series  
Vishay General Semiconductor  
www.vishay.com  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
DO-214AA (SMB J-Bend)  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
5.8 V to 459 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
V
BR (uni-directional)  
6.8 V to 540 V  
6.8 V to 220 V  
600 W  
V
BR (bi-directional)  
PPPM  
PD  
5.0 W  
MECHANICAL DATA  
IFSM (uni-directional only)  
100 A  
Case: DO-214AA (SMB J-Bend)  
TJ max.  
150 °C  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant and commercial grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
Polarity  
Uni-directional, bi-directional  
DO-214AA (SMB J-Bend)  
Package  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. P6SMB10CA).  
Electrical characteristics apply in both directions.  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
Power dissipation on infinite heatsink at TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IPPM  
See next table  
5.0  
A
PD  
W
IFSM  
100  
A
TJ, TSTG  
-65 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 23-Dec-14  
Document Number: 88370  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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