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P6SMB120A-E3/51 PDF预览

P6SMB120A-E3/51

更新时间: 2024-11-27 09:03:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 103K
描述
Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

P6SMB120A-E3/51 数据手册

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P6SMB Series  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in Unidirectional and Bidirectional  
• 600 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty cycle):  
0.01 %  
• Excellent clamping capability  
DO-214AA (SMB)  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 260 °C  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
MAJOR RATINGS AND CHARACTERISTICS  
V(BR) Unidirectional  
6.8 V to 540 V  
6.8 V to 220 V  
600 W  
TYPICAL APPLICATIONS  
V
(BR) Bidirectional  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching  
and lighting on ICs, MOSFET, signal lines of  
sensor units for consumer, computer, industrial and  
telecommunication.  
PPPM  
PD  
5.0 W  
IFSM (Unidirectional only)  
Tj max.  
100 A  
150 °C  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
DEVICES FOR BIDIRECTION APPLICATIONS  
For bidirectional devices use CA suffix (e.g. P6SMB10CA).  
Electrical characteristics apply in both directions.  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: For unidirectional types the band denotes  
cathode end, no marking on bidirectional types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
Minimum 600  
see next table  
5.0  
UNIT  
W
Peak power dissipation with a 10/1000 µs waveform (1,2) (Fig. 1)  
Peak pulse current with a 10/1000 µs waveform (1)  
Power dissipation on infinite heatsink TA = 50 °C ,  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
A
PD  
W
IFSM  
100  
A
TJ, TSTG  
- 65 to + 150  
°C  
Note:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
Document Number 88370  
08-Sep-06  
www.vishay.com  
1

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