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P6KE8.2A-B PDF预览

P6KE8.2A-B

更新时间: 2024-11-04 21:09:19
品牌 Logo 应用领域
FRONTIER 局域网二极管
页数 文件大小 规格书
1页 61K
描述
Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon

P6KE8.2A-B 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.08
Is Samacsys:N最大击穿电压:8.61 V
最小击穿电压:7.79 V外壳连接:ISOLATED
最大钳位电压:12.1 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大反向电流:200 µA表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

P6KE8.2A-B 数据手册

  

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