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P6KE62A-B PDF预览

P6KE62A-B

更新时间： 2024-02-14 07:49:58
品牌 Logo 应用领域
力特 - LITTELFUSE 瞬态抑制器二极管局域网
页数 文件大小 规格书
5页 134K
描述
Transient Voltage Suppression Diodes

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中文翻译

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P6KE62A-B 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ActiveReach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.8Base Number Matches：1

P6KE62A-B 数据手册

 浏览型号P6KE62A-B的Datasheet PDF文件第2页浏览型号P6KE62A-B的Datasheet PDF文件第3页浏览型号P6KE62A-B的Datasheet PDF文件第4页浏览型号P6KE62A-B的Datasheet PDF文件第5页 
TransientVoltage Suppression Diodes  
Axial Leaded – 600W > P6KE series  
RoHS  
P6KE Series  
Description  
The P6KE Series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features  
tꢀ)BMPHFOꢁ'SFF  
tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ  
resistance  
tꢀ 3P)4ꢀDPNQMJBOU  
tꢀ 5ZQJDBMꢀ*R less than 1μA  
above 13V  
tꢀ 5ZQJDBMꢀNBYJNVNꢀ  
temperature coefficient  
ΔVBR = 0.1% x VBR@25°C x ΔT tꢀ )JHIꢀUFNQFSBUVSFꢀ  
soldering guaranteed:  
Agency Approvals  
tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ  
260°C/40 seconds /  
0.375”,(9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ  
Underwriters Laboratory  
Flammability classification  
94V-O  
junction in DO-15 Package  
AGENCY  
AGENCY FILE NUMBER  
E128662/E230531  
tꢀ ꢂꢃꢃ8ꢀQFBLꢀQVMTFꢀ  
capability at 10×1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ  
typically less than 1.0ps  
from 0 Volts to BV min  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
tꢀ .BUUFꢀ5JOꢀ-FBEoGSFFꢀQMBUFE  
tꢀ &YDFMMFOUꢀDMBNQJOHꢀ  
capability  
Parameter  
Symbol  
PPPM  
Value  
600  
Unit  
W
Peak Pulse Power Dissipation by  
10x1000μs test waveform (Fig.1)  
(Note 1)  
Applications  
Steady State Power Dissipation on  
inifinite heat sink atTL=75ºC (Fig. 5)  
PD  
5.0  
W
A
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
only (Note 2)  
V
IFSM  
100  
Maximum Instantaneous Forward  
Voltage at 50A for Unidirectional  
only (Note 3)  
VF  
3.5/5.0  
V
Operating Junction and Storage  
Temperature Range  
T , TSTG -55 to 175  
°C  
J
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
20  
75  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
3. VF<3.5V for devices of VBR <_ 200V and VF< 5.0V for devices of VBR >_ 201V.  
©2009 Littelfuse, Inc.  
81  
Revision: January 09, 2009  
P6KE Series  
Specifications are subject to change without notice.  
Please refer to http://www.Littelfuse.com/series/P6KE.html for current information.  
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中文翻译

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P6KE62A-B 替代型号

型号 品牌 替代类型 描述 数据表
P6KE62A LITTELFUSE

类似代替

 Silicon Avalanche Diodes - Silicon Avalanche Diodes
P6KE62AHE3/54 VISHAY

功能相似

 TVS DIODE 53V 85V DO204AC

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 		Trans Voltage Suppressor Diode, 600W, 53V V(RWM), Unidirectional, 1 Element, Silicon
P6KE62AE3 MICROSEMI

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 		600 Watt TRANSIENT VOLTAGE SUPPRESSOR
P6KE62A-E3 VISHAY

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 		DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Transien
P6KE62A-E3/54 VISHAY

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 		TVS DIODE 53V 85V DO204AC
P6KE62A-E3/73 VISHAY

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 		DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15,
P6KE62AE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 53V V(RWM), Unidirectional, 1 Element, Silicon, ROHS
P6KE62AE3/TR13 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 53V V(RWM), Unidirectional, 1 Element, Silicon, ROHS
P6KE62A-G COMCHIP

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 		600W Transient Voltage Suppressor
P6KE62A-G SENSITRON

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 		Trans Voltage Suppressor Diode, 600W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-1
P6KE62A-G WEITRON

获取价格

 		Trans Voltage Suppressor Diode, 53V V(RWM), Unidirectional,

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