P6KE100C

更新时间： 2024-11-27 17:32:39

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
5页	1048K
描述
Package / Case : DO-15;Mounting Style : Through Hole;Power Rating : 600 W;Polarity : Bidirectional;Breakdown Voltage Vbr : 100 V;Operating Standoff Voltage : 81.0 V;Clamping Voltage Vc : 144 V;Max Peak Current Ipk : 4.2 A;Voltage Tolerance : 10%;Certified (AEC-Q101...etc) : AEC-Q101

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

P6KE100C 数据手册

TVS

P6KE

RECTRON

TECHNICAL SPECIFICATION

SEMICONDUCTOR

SERIES

GPP TRANSIENT VOLTAGE SUPPRESSOR

600 WATT PEAK POWER 1.0 WATT STEADY STATE

FEATURES

* Plastic package has underwriters laboratory

* Glass passivated chip construction

* 600 watt surage capability at 1ms

* Excellent clamping capability

* Low zener impedance

DO-15

* Fast response time

Ratings at 25 ^oC ambient temperature unless otherwise specified.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load,

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA suffix for types P6KE6.8 thru P6KE400

Electrical characteristics apply in both direction

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

SYMBOL

VALUE

UNITS

Watts

RATINGS

PPM

Minimum 600

Peak power dissipation with a 10/1000uS (NOTES 1, FIG.1)

Steady state power dissipation at T

.375” ( 9.5 mm ) ( NOTES 2 )

= 75^oC lead lengths,

5.0

Watts

Amps

Peak forward surge current, 8.3ms single half sine wave-

superimposed on rated load( JEDEC METHOD ) ( NOTES 3 )

FSM

100

Maximum instantaneous forward voltage at 50A for

unidirectional only ( NOTES 4 )

3.5/5.0

Volts

⁰C

Operating and storage temperature range

, TSTG

-65 to + 175

1998-8

NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T

= 25^oC per Fig.2.

2. Mounted on copper pad area of 1.6 X 1.6”( 40X40 mm) per Fig. 5

3. Measured on 8.3ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum.

4. V = 3.0V max. for devices of V(BR) < 200V and V = 5.0 Volts for devices of V(BR) > 200V.

Back

12 3 4 5

中文翻译

下载PDF

P6KE100C 替代型号

型号	品牌	替代类型	描述	数据表
P6KE100CA-E3/54	VISHAY	功能相似	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15,
P6KE100CA	FAIRCHILD	功能相似	600 Watt Transient Voltage Suppressors
P6KE100C	LITTELFUSE	功能相似	Silicon Avalanche Diodes - Silicon Avalanche Diodes

与P6KE100C相关器件

型号	品牌	获取价格	描述	数据表
P6KE100C/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 81V V(RWM), Bidirectional,
P6KE100C/51-E3	VISHAY	获取价格	暂无描述
P6KE100C/54	VISHAY	获取价格	Transient Suppressor,
P6KE100C-13	DIODES	获取价格	Trans Voltage Suppressor Diode, 600W, 81V V(RWM), Bidirectional, 1 Element, Silicon, DO-15
P6KE100C-51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 81V V(RWM), Bidirectional, 1 Element, Silicon, DO-15
P6KE100C-54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 81V V(RWM), Bidirectional, 1 Element, Silicon, DO-15
P6KE100C-54-E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 81V V(RWM), Bidirectional, 1 Element, Silicon, DO-15
P6KE100C-73-E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 81V V(RWM), Bidirectional, 1 Element, Silicon, DO-15
P6KE100CA	EIC	获取价格	Trans Voltage Suppressor Diode, 85.5V V(RWM), Bidirectional,
P6KE100CA	SEMIKRON	获取价格	Glass passivated junction

与P6KE100C相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

P6KE100C

P6KE100C 数据手册

P6KE100C 替代型号

与P6KE100C相关器件

与P6KE100C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P6KE100C

P6KE100C 数据手册

P6KE100C 替代型号

与P6KE100C相关器件

与P6KE100C相关文章

您还可以找

您在本页遇到什么问题？