P6FMBJ13AV-T

更新时间： 2024-11-18 13:12:07

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
4页	1087K
描述
Trans Voltage Suppressor Diode,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

P6FMBJ13AV-T 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.72
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

P6FMBJ13AV-T 数据手册

TVS

RECTRON

TECHNICAL SPECIFICATION

P6FMBJ

SERIES

SEMICONDUCTOR

GPP TRANSIENT VOLTAGE SUPPRESSOR

600 WATT PEAK POWER 1.0 WATT STEADY STATE

FEATURES

* Plastic package has underwriters laboratory

* Glass passivated chip construction

* 600 watt surage capability at 1ms

* Excellent clamping capability

* Low zener impedance

DO-214AA

* Fast response time

Ratings at 25 ^oC ambient temperature unless otherwise specified.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Dimensions in inches and (millimeters)

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA suffix for types P6FMBJ6.8 thru P6FMBJ400

Electrical characteristics apply in both direction

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

SYMBOL

VALUE

UNITS

Watts

RATINGS

PPM

Minimum 600

Peak Power Dissipation with a 10/1000uS (Note 1,2 Fig.1)

Peak Pulse Durrent with a 10/1000uS waveform

( Note 1, Fig.3 )

PPM

SEE TABLE 1

Amps

Steady State Power Dissipation at T

= 75^oC ( Note 2 )

(

)

5.0

Peak Forward Surge Current, 8.3mS single half sine wave super-

imposed on rated load (Jedec Method)(Note 3,2) unidirectional only

FSM

100

Maximum Instantaneous Forward Voltage at 50A for

unidirectional only ( Note 3,4 )

SEE NOTE 4

-55 to + 150

Volts

⁰C

, TSTG

Operating and Storage Temperature Range

1998-8

NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T

= 25^oC per Fig.2.

2. Mounted on 0.2 X 0.2” ( 5.0 X 5.0mm ) copper pad to each terminal.

3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.

4. V = 3.5V on P6FMBJ6.8 thru P6FMB90 devices and V = 5.0V on P6FMBJ100 thur P6FMBJ400 devices.

Back

12 3 4

中文翻译

下载PDF

与P6FMBJ13AV-T相关器件

型号	品牌	获取价格	描述	数据表
P6FMBJ13AV-W	RECTRON	获取价格	Trans Voltage Suppressor Diode,
P6FMBJ13A-W	RECTRON	获取价格	Trans Voltage Suppressor Diode, 600W, 11.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
P6FMBJ13CA	RECTRON	获取价格	Package / Case : DO-214AA(SMB);Mounting Style : SMD/SMT;Power Rating : 600 W;Polarity : Bi
P6FMBJ13V-W	RECTRON	获取价格	Trans Voltage Suppressor Diode,
P6FMBJ13-W	RECTRON	获取价格	Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
P6FMBJ15	RECTRON	获取价格	GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE)
P6FMBJ150	RECTRON	获取价格	GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE)
P6FMBJ150A	RECTRON	获取价格	GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE)
P6FMBJ150AV-T	RECTRON	获取价格	Trans Voltage Suppressor Diode,
P6FMBJ150A-W	RECTRON	获取价格	暂无描述

与P6FMBJ13AV-T相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

P6FMBJ13AV-T

P6FMBJ13AV-T 技术参数

P6FMBJ13AV-T 数据手册

与P6FMBJ13AV-T相关器件

与P6FMBJ13AV-T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P6FMBJ13AV-T

P6FMBJ13AV-T 技术参数

P6FMBJ13AV-T 数据手册

与P6FMBJ13AV-T相关器件

与P6FMBJ13AV-T相关文章

您还可以找

您在本页遇到什么问题？