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P4SMA250A PDF预览

P4SMA250A

更新时间: 2024-11-14 20:15:27
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网光电二极管
页数 文件大小 规格书
5页 431K
描述
Trans Voltage Suppressor Diode, 400W, 214V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

P4SMA250A 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:16 weeks风险等级:1.61
Is Samacsys:N最大击穿电压:263 V
最小击穿电压:237 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
参考标准:IEC-61000-4-2, 4-4, 4-5最大重复峰值反向电压:214 V
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

P4SMA250A 数据手册

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Features  
Applications  
nꢀ RoHSꢀcompliant*ꢀandꢀhalogenꢀfree**  
nꢀ SurfaceꢀMountꢀSMAꢀpackage  
nꢀꢀBreakdownꢀVoltage:ꢀ6.8ꢀtoꢀ550ꢀvolts  
nꢀ PeakꢀPulseꢀPower:ꢀ400ꢀwatts  
nꢀ Typicalꢀtemperatureꢀcoefficient:ꢀ  
nꢀ IECꢀ61000-4-2ꢀESDꢀ(Min.ꢀLevelꢀ4)  
nꢀ IECꢀ61000-4-4ꢀEFT  
nꢀ IECꢀ61000-4-5ꢀSurge  
V =ꢀ0.1ꢀ%ꢀxꢀV @ꢀ25ꢀ°CꢀxꢀT  
BRꢀ BRꢀ  
P4SMAꢀTransientꢀVoltageꢀSuppressorꢀDiodeꢀSeriesꢀ  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components.  
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AC (SMA)  
size format. The Transient Voltage Suppressor series offers a choice of Breakdown Voltages from 6.8 V up to 550 V. Typical fast response  
times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for bidirectional devices.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration  
minimizes roll away.  
Maximum Ratings (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Value  
Unit  
(Note 1,2)  
Peak Pulse Power Dissipation (T = 1 ms)  
P
P
400  
Watts  
PK  
Peak Forward Surge Current  
8.3 ms Single Half Sine Wave Superimposed on Rated Load  
(JEDEC Method)  
I
40  
Amps  
FSM  
(Note 3)  
P4SMA6.8A ~ P4SMA200A  
P4SMA220A ~ P4SMA550A  
Instantaneous Forward Voltage @ 25 A  
(For Unidirectional Units Only)  
3.5  
5.0  
V
T
Volts  
F
Operating Temperature Range  
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
J
T
STG  
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 °C per Pulse Derating Curve.  
A
2. Mounted on 5.0 mm x 5.0 mm copper pad to each terminal.  
3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).  
How to Order  
P4SMA 6.8 CA  
Series  
P4SMA = SMA/DO-214AC  
Breakdown Voltage  
6.8 to 550 = 6.8 to 550 V  
(Volts)  
BD  
Suffix  
A = 5 % Tolerance Unidirectional Device  
CA = 5 % Tolerance Bidirectional Device  
Asia-Pacific:  
Tel: +886-2 2562-4117  
Fax: +886-2 2562-4116  
EMEA:  
Tel: +36 88 520 390  
Fax: +36 88 520 211  
The Americas:  
Tel: +1-951 781-5500  
Fax: +1-951 781-5700  
www.bourns.com  
*ꢀꢀRoHSꢀDirectiveꢀ2002/95/ECꢀJan.ꢀ27,ꢀ2003ꢀincludingꢀannexꢀandꢀRoHSꢀRecastꢀ2011/65/EUꢀJuneꢀ8,ꢀ2011.ꢀ  
**Bournsꢀconsidersꢀaꢀproductꢀtoꢀbeꢀ“halogenꢀfree”ꢀifꢀ(a)ꢀtheꢀBromineꢀ(Br)ꢀcontentꢀisꢀ900ꢀppmꢀorꢀless;ꢀ(b)ꢀtheꢀChlorineꢀ(Cl)ꢀcontentꢀisꢀ900ꢀppmꢀorꢀless;ꢀandꢀ(c)ꢀtheꢀtotalꢀBromineꢀ(Br)ꢀꢀ  
ꢀꢀꢀꢀandꢀChlorineꢀ(Cl)ꢀcontentꢀisꢀ1500ꢀppmꢀorꢀless.  
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.  
Theꢀdeviceꢀcharacteristicsꢀandꢀparametersꢀinꢀthisꢀdataꢀsheetꢀcanꢀandꢀdoꢀvaryꢀinꢀdifferentꢀapplicationsꢀandꢀactualꢀdeviceꢀperformanceꢀmayꢀvaryꢀoverꢀtime.  
Usersꢀshouldꢀverifyꢀactualꢀdeviceꢀperformanceꢀinꢀtheirꢀspecificꢀapplications.  

P4SMA250A 替代型号

型号 品牌 替代类型 描述 数据表
P4SMA250A LITTELFUSE

类似代替

Silicon Avalanche Diodes - 400W Surface Mount Transient Voltage Supressors
P4SMA250A-E3/61 VISHAY

功能相似

TVS DIODE 214V 344V DO214AC
P4SMA250 DIOTEC

功能相似

Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes

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