5秒后页面跳转
P4SMA18A-HE3/61 PDF预览

P4SMA18A-HE3/61

更新时间: 2024-11-29 14:44:07
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
5页 95K
描述
DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Transient Suppressor

P4SMA18A-HE3/61 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AC
包装说明:ROHS COMPLIANT, PLASTIC, SMA, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.62
Is Samacsys:NBase Number Matches:1

P4SMA18A-HE3/61 数据手册

 浏览型号P4SMA18A-HE3/61的Datasheet PDF文件第2页浏览型号P4SMA18A-HE3/61的Datasheet PDF文件第3页浏览型号P4SMA18A-HE3/61的Datasheet PDF文件第4页浏览型号P4SMA18A-HE3/61的Datasheet PDF文件第5页 
P4SMA Series  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
400 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty  
cycle): 0.01 % (300 W above 91 V)  
• Excellent clamping capability  
• Very fast response time  
DO-214AC (SMA)  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VBR uni-directional  
6.8 V to 540 V  
6.8 V to 220 V  
400 W, 300 W  
3.3 W  
Use in sensitive electronics protection against  
voltage transients induced by inductive load switching  
and lighting on ICs, MOSFET, signal lines of  
sensor units for consumer, computer, industrial and  
telecommunication.  
V
BR bi-directional  
PPPM  
PD  
IFSM (uni-directional only)  
TJ max.  
40 A  
150 °C  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC Q101 qualified)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g.  
P4SMA10CA).  
Electrical characteristics apply in both directions.  
E3 suffix meets JESD 201 class 1A whisker test, HE3  
suffix meets JESD 201 class 2 whisker test  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
400  
UNIT  
W
Peak power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)  
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3)  
Power dissipation on infinite heatsink, TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
See next table  
3.3  
A
PD  
W
IFSM  
40  
A
TJ, TSTG  
- 65 to + 150  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 300 W above 91 V  
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
Document Number: 88367  
Revision: 21-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

与P4SMA18A-HE3/61相关器件

型号 品牌 获取价格 描述 数据表
P4SMA18A-M3/5A VISHAY

获取价格

TVS DIODE 15.3V 25.2V DO214AC
P4SMA18A-M3/61 VISHAY

获取价格

TVS DIODE 15.3V 25.2V DO214AC
P4SMA18AQ YANGJIE

获取价格

Surface Mount Transient Voltage Suppressor Diodes
P4SMA18A-Q BOURNS

获取价格

Transient Voltage Suppressor Diode Series
P4SMA18A-Q1 ANBON

获取价格

SMA
P4SMA18AS PANJIT

获取价格

SMA
P4SMA18ATR13 CENTRAL

获取价格

Trans Voltage Suppressor Diode, 18V V(RWM), Unidirectional,
P4SMA18ATR13TIN/LEAD CENTRAL

获取价格

Trans Voltage Suppressor Diode, 18V V(RWM), Unidirectional,
P4SMA18C SEMIKRON

获取价格

Trans Voltage Suppressor Diode, 400W, 14.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P4SMA18C LITTELFUSE

获取价格

Trans Voltage Suppressor Diode, 400W, 15.3V V(RWM), Bidirectional, 1 Element, Silicon, DO-