P4SMA11CA

更新时间： 2024-11-27 12:04:43

品牌	Logo	应用领域
鲁光 - LGE		瞬态抑制二极管
页数	文件大小	规格书
3页	123K
描述
Glass Passivated Junction Transient Voltage Suppressor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

P4SMA11CA 技术参数

Case Style：	SMA	Ppk(W)：	400
MIN_(V)：	10.45	MAX_(V)：	11.55
Vwm_(V)：	9.4	Ir_(uA)：	5
Ippm_(A)：	25.64	Vc_(V)：	15.6
class：	Diodes

P4SMA11CA 数据手册

P4SMA SERIES

Glass Passivated Junction Transient Voltage Suppressor

VOLTAGE-6.8 TO 550 Volts

400 Watt Peak Pulse Power

DO-214AC(SMA)

Features

4.5± 0.1

• For surface mounted applications in order to

optimize board space

• Glass passivated junction

• Built-in strain relief

• Excellent clamping capability

• Low profile package

5.1± 0.2

• Low inductance

• Excellent clamping capability

• Fast response time: typically less than

1.0 ps from 0 volts to BV min

• Typical IR less than 1µA above 10V

• High temperature soldering guaranteed:

250°C/10 seconds at terminals

0.2± 0.05

1.3± 0.2

Dimensions in millimeters

Mechanical Data

Case: JEDEC DO-214AC Molded plastic

Terminal： Solder plated, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denoted positive end (cathode)

except Bipolar

Standard Packaging: 12mm tape(EIA STD RS-481)

Weight: 0.002 ounces, 0.061 grams

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use CA Suffix for types P4SMA6.8CA thru types P4SMA550CA

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

VALUE

Minimum 400

SEE TABLE 1

UNITS

Watts

Amps

Peak Pulse Power Dissipation at TA = 25 °C, TP = 1ms (Note 1)

P_PPM

I_PPM

Peak Pulse Current of on 10/1000 µs waveform (Note 1)

Steady State Power Dissipation at TL = 75°C

Lead lengths .375", 9.5mm (Note 2)

P_M

1.0

Watts

(AV)

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed on Rated Load, (JEDEC Method)(Note 3)

Operatings and Storage Temperature Range

Amps

°C

I_FSM

T_J, T_STG

-55 +150

NOTES:

1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2. Mounted on 5.0mm²(0.03mm thick) Copper Pads to each termina

3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.

http://www.luguang.cn

mail:lge@luguang.cn

12 3

中文翻译

下载PDF

与P4SMA11CA相关器件

型号	品牌	获取价格	描述	数据表
P4SMA11CA/11	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 9.4V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
P4SMA11CA/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 9.4V V(RWM), Bidirectional,
P4SMA11CA/51-E3	VISHAY	获取价格	DIODE 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient S
P4SMA11CA/5A	VISHAY	获取价格	Transient Suppressor,
P4SMA11CA-51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 9.4V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
P4SMA11CA-AT	YAGEO	获取价格	瞬态抑制二极管 (车用)
P4SMA11CA-AU	PANJIT	获取价格	SMA
P4SMA11CA-E3	VISHAY	获取价格	DIODE 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient S
P4SMA11CA-E3/11	VISHAY	获取价格	DIODE 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient S
P4SMA11CA-E3/51	VISHAY	获取价格	DIODE 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient S

与P4SMA11CA相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

P4SMA11CA

P4SMA11CA 技术参数

P4SMA11CA 数据手册

与P4SMA11CA相关器件

与P4SMA11CA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P4SMA11CA

P4SMA11CA 技术参数

P4SMA11CA 数据手册

与P4SMA11CA相关器件

与P4SMA11CA相关文章

您还可以找

您在本页遇到什么问题？