Datasheet > P4SMA100A-E3

P4SMA100A-E3

更新时间： 2024-11-26 08:45:47

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	85K
描述
DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient Suppressor

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P4SMA100A-E3 数据手册

New Product

P4SMA Series

Vishay General Semiconductor

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

400 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %

(300 W above 91 V)

DO-214AC (SMA)

• Excellent clamping capability

• Very fast response time

PRIMARY CHARACTERISTICS

• Low incremental surge resistance

V_BRuni-directional

6.8 V to 540 V

6.8 V to 220 V

400 W, 300 W

3.3 W

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

V_BRbi-directional

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

P_PPM

P_D

• Halogen-free according to IEC 61249-2-21 definition

I_FSM(uni-directional only)

T_Jmax.

40 A

150 °C

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability rating

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. P4SMA10CA).

Electrical characteristics apply in both directions.

Base P/N-M3

- halogen-free, RoHS compliant, and

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial and telecommunication.

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

400

UNIT

Peak power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾(fig. 3)

Power dissipation on infinite heatsink, T_A= 50 °C

I_PPM

See next table

3.3

P_D

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

I_FSM

T_J, T_STG

- 65 to + 150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2, rating is 300 W above 91 V

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Document Number: 89276

Revision: 20-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与P4SMA100A-E3相关器件

型号	品牌	获取价格	描述	数据表
P4SMA100A-E3/5A	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2
P4SMA100A-E3/61	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2
P4SMA100AHE3/5A	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2
P4SMA100AHE3/61	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2
P4SMA100AHE3_A/H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 300W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4SMA100AHE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 300W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4SMA100AHM3_A/H	VISHAY	获取价格	Trans Voltage Suppressor Diode,
P4SMA100AHM3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode,
P4SMA100A-M3/5A	VISHAY	获取价格	300W,100V 5%,UNIDIR,SMA TVS
P4SMA100A-M3/61	VISHAY	获取价格	TVS DIODE 85.5V 137V DO214AC

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