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P4KE170 PDF预览

P4KE170

更新时间: 2024-02-22 09:32:49
品牌 Logo 应用领域
辰达行 - MDD 脉冲
页数 文件大小 规格书
4页 79K
描述
Breakdown Voltage:6.8-440 Volts Peak Pulse P ower:400 Watts

P4KE170 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.8Is Samacsys:N
Base Number Matches:1

P4KE170 数据手册

 浏览型号P4KE170的Datasheet PDF文件第2页浏览型号P4KE170的Datasheet PDF文件第3页浏览型号P4KE170的Datasheet PDF文件第4页 
P4KE6.8 THRU P4KE440CA  
GLASS PASSIVAED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR  
Breakdown Voltage:6.8-440 Volts Peak Pulse Power:400 Watts  
FEATURE  
DO-41  
400w peak pulse power capability  
Excellent clamping capability  
Low incremental surge resistance  
Fast response time:typically less than 1.0ps from 0v to  
1.0(25.4)  
MIN.  
V
BR for unidirectional and 5.0ns ror bidirectional types.  
High temperature soldering guaranteed:  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
265 C/10S/9.5mm lead length at 5 lbs tension  
0.205 (5.2)  
0.166(4.1)  
MECHANICAL DATA  
1.0 (25.4)  
MIN.  
Case: JEDEC DO-41 molded plastic body over  
passivated junction  
0.034 (0.86)  
0.028 (0.70)  
DIA.  
Terminals: Plated axial leads, solderable per MIL-STD 750,  
method 2026  
Polarity: Color band denotes cathode except for  
bidirectional types  
Dimensions in inches and (millimeters)  
Mounting Position: Any  
Weight: 0.012 ounce,0.33 grams  
DEVICES FOR BIDIRECTIONAL APPLICATIONS  
For bidirectional use suffix C or CA for types P4KE6.8 thru P4KE440 (e.g. P4KE6.8CA,P4KE440CA)  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS AND CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
SYMBOLS  
VALUE  
UNITS  
Peak power dissipation  
(Note 1)  
PPPM  
IPPM  
Minimum 400  
See Table 1  
1.0  
Watts  
Amps  
Watts  
Amps  
Peak pulse reverse current  
(Note 1, Fig.3)  
Steady state power dissapation (Note 2)  
Peak forward surge current (Note 3)  
Maximum instantaneous forward voltage at 25A  
for unidirectional only (Note 4)  
PM(AV)  
IFSM  
40  
VF  
3.5/6.5  
Volts  
C
Operating junction and storage temperature range  
TSTG,TJ  
-55 to + 175  
Notes:  
1.10/1000µs waveform non-repetitive current pulse,per Fig.3 and derated above Ta=25 C per Fig.2  
2.TL=75 C,lead lengths 9.5mm,Mounted on copper pad atea of (40x40mm)Fig.5  
3.Measured on 8.3ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.  
4.VF=3.5V max.for devices of V(BR)<200V,and VF=6.5V max.for devices of V(BR)>200V  
MDD ELECTRONIC  

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