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P4KE150A PDF预览

P4KE150A

更新时间: 2024-11-18 20:20:23
品牌 Logo 应用领域
MERITEK 局域网二极管
页数 文件大小 规格书
4页 259K
描述
Trans Voltage Suppressor Diode, 400W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, DO-41, 2 PIN

P4KE150A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.29
Is Samacsys:N其他特性:EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED, LOW IMPEDANCE
最大击穿电压:158 V最小击穿电压:143 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.5 W最大重复峰值反向电压:128 V
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

P4KE150A 数据手册

 浏览型号P4KE150A的Datasheet PDF文件第2页浏览型号P4KE150A的Datasheet PDF文件第3页浏览型号P4KE150A的Datasheet PDF文件第4页 
Transient Voltage Suppressors  
P4KE Series  
MERITEK  
UL E223045  
FEATURES  
Plastic package.  
Glass passivated chip junction in DO-204AL/DO-41 package.  
400W peak pulse power capability on 10/1000μs waveform.  
Excellent clamping capability.  
Low zener impedance.  
Fast response time: typically less than 1.0ps from 0 volt to BV min.  
Typical IR less than 1μA above 10V.  
High temperature soldering guaranteed: 265ć/10 seconds/.375”,  
(9.5mm) lead length, 5lbs., (2.3kg) tension.  
DO-204AL/DO-41  
MECHANICAL DATA  
Case: JEDEC DO-41 Molded Plastic.  
Terminals: Axial leads, solderable per MIL-STD-750, Method 2026.  
Polarity: Color band denotes cathode except Bidirectional.  
Mounting Position: Any.  
Weight: 0.012 ounce, 0.3 grams.  
DEVICES FOR BIPOLAR APPLICATION  
For Bidirectional, use C or CA suffix for type P4KE6.8 through type P4KE550 (e.g. P4KE6.8C, P4KE550CA);  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS AND CHARACTERISTICS  
Ratings at 25ć ambient temperature unless otherwise specified.  
RATING  
SYMBOL  
VALUE  
UNIT  
Peak Pulse Power Dissipation on 10/1000ȝs waveform. (Note 1ˈFig. 1)  
Peak Pulse Current on 10/1000ȝs waveform. (Note 1ˈFig. 3)  
Steady State Power Dissipation at TL =75ćˈLead length .375” (9.5mm).  
(Fig. 5)  
PPPM  
Minimum 400  
See Table  
Watts  
IPPM  
Amps  
PM(AV)  
1.5  
Watts  
Peak Forward Surge Currentˈ8.3ms Single Half Sine-Wave Superimposed  
on Rated Load. (JEDEC Method) (Note 2, Fig. 6)  
IFSM  
40  
Amps  
Operating junction and Storage Temperature Range.  
TJ , TSTG  
-55 to +175  
ć
Notes:  
1. Non-repetitive current pulse, per Fig. 3 and derated above TA = 25ć per Fig. 2.  
2. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minute maximum.  
All specifications are subject to change without notice.  
1
Rev 7  

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