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P4KE110A PDF预览

P4KE110A

更新时间: 2024-01-09 21:13:35
品牌 Logo 应用领域
SECOS 局域网二极管
页数 文件大小 规格书
3页 334K
描述
400 Peak Power

P4KE110A 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.81
击穿电压标称值:110 V最大钳位电压:152 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE极性:UNIDIRECTIONAL
最大重复峰值反向电压:94 V子类别:Transient Suppressors
表面贴装:NO

P4KE110A 数据手册

 浏览型号P4KE110A的Datasheet PDF文件第2页浏览型号P4KE110A的Datasheet PDF文件第3页 
P4KE SERIES  
Voltage 6.8V ~ 440V  
400 Peak Power / 1.0W Steady State  
400W Peak Power TVS  
Elektronische Bauelemente  
A suffix of "-C" specifies halogen & RoHS compliant  
FEATURES  
DO - 41  
Constructed with Glass Passivated Die  
400W peak pulse power Dissipation  
Excellent clamping capability  
Uni and Bidirectional unit  
Very fast response time  
C
A
Component in accordance to RoHS 2002/95/EC  
B
A
MECHANICAL DATA  
Case: DO-41  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
D
Terminals: Lead free Plating (Tin Finish)  
Solderable per MIL-STD-202, Method 208  
Polarity: Cathode Band  
Millimeter  
Weight: 0.318 grams (Approximate)  
REF.  
Min.  
Max.  
A
B
C
D
25.4 (TYP)  
4.10  
2.00  
0.70  
5.21  
2.72  
0.90  
ORDER INFORMATION  
Part Number  
Type  
P4KE SERIES  
Lead (Pb)-free  
P4KE SERIES-C  
Lead (Pb)-free and Halogen-free  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Maximum Ratings @ TA = 25°C)  
CHARACTERISTIC  
SYMBOL  
PPK  
VALUE  
Minimum 400  
1
UNITS  
W
Peak Power Dissipation with a 10/1000µs waveform 1  
Power Dissipation on infinite heatsink at TL=75°C  
P D  
W
Peak Forward Surge Current, 8.3ms single half sine-wave  
unidirectional only 2  
IFSM  
40  
A
Maximum instantaneous forward voltage at 25 A for unidirectional  
only 3  
VF  
3.5 / 5.0  
V
Operating and Storage Temperature Range  
Notes:  
TJ, TSTG  
150, -55 to +150  
°C  
1. Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
2. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.  
3. VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V.  
13-Jul-2018 Rev. D  
Page 1 of 3  

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