Datasheet > P4C1681-12FSMB

P4C1681-12FSMB

更新时间： 2022-12-29 20:10:04

品牌	Logo	应用领域
PYRAMID		/
页数	文件大小	规格书
10页	194K
描述
ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS

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P4C1681-12FSMB 数据手册

P4C1681, P4C1682

MAXIMUM RATINGS¹

Symbol

Parameter

Value

Unit

Symbol

Parameter

Value

Unit

V_CC

Power Supply Pin with

Respect to GND

–0.5 to +7

T_BIAS

Temperature Under

Bias

–55 to +125

°C

Terminal Voltage with

Respect to GND

(up to 7.0V)

–0.5 to

T_STG

P_T

I_OUT

Storage Temperature

Power Dissipation

DC Output Current

–65 to +150

°C

V_TERM

T_A

V_CC+0.5

1.0

Operating Temperature –55 to +125 °C

CAPACITANCES⁽⁴⁾

RECOMMENDED OPERATING

V_CC= 5.0V, T_A= 25°C, f = 1.0MHz

TEMPERATURE AND SUPPLY VOLTAGE

Ambient

Symbol

Parameter

Conditions Typ. Unit

V_CC

Grade(2)

GND

Temperature

–55°C to +125°C

0°C to +70°C

C_IN

C_OUT

V_IN= 0V

_OUT= 0V

Military

Commercial

5.0V ± 10%

Input Capacitance

Output Capacitance

DC ELECTRICAL CHARACTERISTICS

Over Recommended operating temperature and supply voltages(2)

P4C1681

P4C1682

Sym.

Parameter

Test Conditions

Unit

Min

Max

_CC+0.5

0.8

Input High Voltage

V_IH

V_IL

V_HC

V_LC

2.2

–0.5⁽³⁾

Input Low Voltage

CMOS Input High Voltage

CMOS Input Low Voltage

Input Clamp Diode Voltage

Output Low Voltage

(TTL Load)

V_CC–0.2 V_CC+0.5

–0.5⁽³⁾

0.2

–1.2

0.4

V_CD

V_OL

V_CC= Min., I_IN= –18 mA

I_OL= +8 mA, V_CC= Min.

V_OLCOutput Low Voltage

(CMOS Load)

_OLC= +100 µA, V_CC= Min.

0.2

V_OH

Output High Voltage

(TTL Load)

I_OH= –4 mA, V_CC= Min.

2.4

V_OHC

I_OHC= –100 µA, V_CC= Min.

V_CC–0.2

Output High Voltage

(CMOS Load)

V_CC= Max.

Mil.

I_LI

Input Leakage Current

+10

–10

–5

µA

V_IN= GND to V_CC

Comm'l

V_CC= Max.

Mil.

Comm'l

–10

I_LO

Output Leakage Current

+10

µA

–5

µA

CE = V_IH

V_OUT= GND to V_CC

Notes:

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air flow.

3. Transient inputs with V_ILand I_ILnot more negative than –3.0V and

–100mA, respectively, are permissible for pulse widths up to 20ns.

4. This parameter is sampled and not 100% tested.

1. Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification

is not implied. Exposure to MAXIMUM rating conditions for extended

periods may affect reliability.

Document # SRAM109 REV A

Page 2 of 10

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