Datasheet > P4C1681-12CC

P4C1681-12CC

更新时间： 2022-12-29 20:10:04

品牌	Logo	应用领域
PYRAMID		/
页数	文件大小	规格书
10页	194K
描述
ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS

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数据手册

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P4C1681-12CC 数据手册

P4C1681, P4C1682

AC ELECTRICAL CHARACTERISTICS—WRITE CYCLE

(V_CC= 5V ± 10%, All Temperature Ranges)⁽²⁾

-12

-15

-20

-25

-35

Symbol

Parameter

Unit

Min Max Min Max Min Max Min Max Min Max

t_WC

t_CW

Write Cycle Time

Chip Enable Time

to End of Write

t_AW

t_AS

Address Valid to

End of Write

Address Set-up

Time

t_WP

t_AH

Write Pulse Width

Address Hold

Time

t_DW

Data Valid to

End of Write

Data Hold Time

t_DH

t_WZ

Write Enable to

Output in High Z^†

t_OW

Output Active to

End of Write

t_AWE

t_ADV

Write Enable to

Data-out Valid^£

Data-in Valid to

Data-out Valid

^†P4C1682 only.

^£P4C1681 only.

WRITE CYCLE NO. 1 (WE controlled)⁽¹⁰⁾

Notes:

12.Write Cycle Time is measured from the last valid address to the

first transitioning address.

10.CE and WE must be LOW for WRITE cycle.

11.If CE goes HIGH simultaneously with WE HIGH, the output

remains in a high impedance state.

Document # SRAM109 REV A

Page 5 of 10

1 2 3 456 7 8...10

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