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P3257-01 PDF预览

P3257-01

更新时间: 2024-11-24 22:17:35
品牌 Logo 应用领域
HAMAMATSU 光电光电器件
页数 文件大小 规格书
3页 141K
描述
MCT photoconductive detector

P3257-01 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:METAL PACKAGE-9Reach Compliance Code:unknown
HTS代码:8541.40.80.00风险等级:5.59
Is Samacsys:N配置:SINGLE
功能数量:1最高工作温度:60 °C
最低工作温度:-40 °C光电设备类型:OPTOELECTRONIC DEVICE
Base Number Matches:1

P3257-01 数据手册

 浏览型号P3257-01的Datasheet PDF文件第2页浏览型号P3257-01的Datasheet PDF文件第3页 
I N F R A R E D D E T E C T O R  
MCT photoconductive detector  
,
P3257 series P4249-08  
10 µm band infrared detector with high sensitivity and high-speed response  
Features  
Applications  
High-speed response, high sensitivity in the 10 µm  
band detection  
Photoconductive element that decreases its resistance  
by input of infrared light  
Thermal imaging  
Remote sensing  
FTIR  
CO2 laser detection  
Infrared spectrophotometer  
Custom devices available  
Custom devices not listed in this catalog are also  
available with different spectral response, active  
area sizes and number of element.  
Accessories (Optional)  
Wide product lineups including non-cooled type,  
thermoelectrically cooled type and micro-cooled type  
Easy-to-use infrared detector modules with preamp  
available.  
Valve operator  
Amplifiers for dewar type MCT photoconductive detector  
C5185  
A3515  
Infrared detector module with preamp  
P7752-10  
(with P3257-10)  
Specification / Absolute maximum ratings  
Absolute maximum ratings  
Dimensional  
outline/  
Window  
material  
Operating  
temperature  
Topr  
Storage  
temperature  
Tstg  
Active area  
Allowable  
current  
Type No.  
Package  
Cooling  
(mm)  
0.025 × 0.025  
0.1 × 0.1  
1 × 1  
(mA)  
10  
(°C)  
(°C)  
P3257-25  
P3257-01  
P3257-10  
P4249-08  
/ZnS  
/ZnS  
20  
Liquid  
nitrogen  
Metal dewar  
-40 to +60  
-55 to +60  
40  
0.5 × 0.5 *1  
30  
*1: 8 elements array  
Electrical and optical characteristics (Typ. unless otherwise noted)  
Measurement  
Peak  
sensitivity  
wavelength  
lp  
Photo  
sensitivity *2  
S
condition  
Element  
temperature  
T
Cut-off  
wavelength  
lc  
Rise time  
tr  
0 to 63 %  
Dark  
resistance  
Rd  
*
*
D
(lp, 1200, 1)  
D
(500, 1200, 1)  
Type No.  
l=lp  
Min.  
Typ.  
(°C)  
(µm)  
10.0  
(µm)  
12.0  
(V/W)  
1 × 105  
3 × 104  
1 × 103  
2 × 103  
(cm·Hz1/2/W) (cm·Hz1/2/W) (cm·Hz1/2/W)  
(µs)  
0.6  
(W)  
40  
80  
P3257-25  
P3257-01  
P3257-10  
P4249-08  
-196  
1 × 1010  
2 × 1010  
4.0 × 1010  
40  
*2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.  
1

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