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P2750-06

更新时间： 2024-02-08 19:57:10
品牌 Logo 应用领域
HAMAMATSU 光电光电器件
页数 文件大小 规格书
4页 133K
描述
MCT photoconductive detector Non-cooled type and TE-cooled type suitable for long, continuous operation

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P2750-06 技术参数

生命周期：Active包装说明：TO-3, 8 PIN
Reach Compliance Code：unknownHTS代码：8541.40.80.00
风险等级：5.59Is Samacsys：N
配置：COMPLEX功能数量：1
最高工作温度：60 °C最低工作温度：-40 °C
光电设备类型：OPTOELECTRONIC DEVICEBase Number Matches：1

P2750-06 数据手册

 浏览型号P2750-06的Datasheet PDF文件第2页浏览型号P2750-06的Datasheet PDF文件第3页浏览型号P2750-06的Datasheet PDF文件第4页 
I N F R A R E D D E T E C T O R  
MCT photoconductive detector  
P3257/P3981/P2750 series  
Non-cooled type and TE-cooled type suitable for long, continuous operation  
Features  
Applications  
Choice of spectral response (up to 12 µm)  
The band gap can be adjusted by controlling the composition  
ratio of HgTe and CdTe. Utilizing this fact, various types are  
available in different spectral characteristics.  
Photoconductive element that decreases its resistance  
by input of infrared light  
Radiation thermometer  
Gas analyzer  
Infrared spectrophotometer  
FTIR  
CO2 laser monitor  
Custom devices available  
Accessories (Optional)  
Custom devices not listed in this catalog are also  
available with different spectral response, active area  
size and number of element.  
Heatsink for two-stage TE-cooler  
A3179-01  
(Can also be used with P3257-31)  
Heatsink for three-stage TE-cooler A3179-04  
Temperature controller C1103-05 (-25 to -75 ˚C)  
C1103-07 (20 to -30 ˚C)  
Easy-to-use infrared detector modules with preamp  
available  
Preamp  
C5185-01 (P3981/P2750 series)  
(Preamp for P3257-30/-31 available upon request)  
Infrared detector modules with preamp  
P4631-10 (P3257-31)  
P4631  
(P3981)  
P4631-04 (P2750)  
ꢀ General ratings / Absolute maximum ratings  
Absolute maximum ratings  
Dimensional  
outline/  
Active  
area  
Thermistor TE-cooler  
Operating  
temperature temperature  
Storage  
Allowable  
current  
Type No.  
Package  
Cooling  
power  
dissipation  
(mW )  
allowable  
current  
W indow  
Topr  
(°C)  
Tstg  
(°C)  
material *1  
(mm)  
(A)  
-
(mA)  
50  
P3257-30  
ꢀ/Se  
ꢀ/Se  
with BNC connector Non-cooled  
-
O ne-stage  
TE-cooled  
P3257-31  
TO-8  
1.5  
50  
P3981  
ꢀ/S  
ꢀ/S  
ꢀ/S  
TO-8  
1 × 1  
3
3
6
6
3
Two-stage  
TO-66  
-40 to +60 -55 to +60  
P3981-01  
P2750-08  
P2750  
0.2  
TE-cooled  
TO-8  
1.0  
Three-stage  
TE-cooled  
ꢀ/S  
TO-3  
P2750-06  
0.25 × 0.25  
*1: W indow material S : Sapphire glass  
Se: ZnSe  
ꢀ Electrical and optical characteristics (Typ. unless otherwise noted)  
Measurement  
P eak  
sensitivity  
wavelength  
λ p  
Photo  
sensitivity *2  
S
λ =λ p *3  
condition  
Elem ent  
tem perature  
T
Cut-off  
wavelength  
λ c  
Rise time  
tr  
0 to 63 %  
Dark  
resistance  
Rd  
D
D
NEP  
(500, 1200, 1) *4  
(
λ
p *3, 1200, 1) λ =λ p *3  
Type No.  
Min.  
Typ.  
1/2  
1/2  
(°C)  
25  
0
(µm)  
6.5  
7.0  
(µm)  
11.0  
11.5  
(V/W )  
2 × 10-3  
5 × 10-3  
(cm ·H z /W ) (cm ·H z /W ) (cm·Hz1/2/W ) (W /Hz1/2  
)
(µs)  
1 (ns)  
1 (ns)  
(Ω)  
30  
35  
P3257-30  
P3257-31  
P3981  
P3981-01  
P2750-08  
P2750  
5.0 × 105 3.0 × 106  
1.0 × 106 6.0 × 106  
2.0 × 105  
5.0 × 105  
5.0 × 10-7  
2.0 × 10-7  
3.6  
4.8  
4.8  
4.3  
5.4  
5.5  
1 × 104  
5.0 × 108 5.0 × 109 1.3 × 1011 7.7 × 10-13  
10  
2
600  
160  
200  
-30  
-60  
3 × 102  
2 × 103  
3 × 103  
3.0 × 108 3.0 × 109 1.5 × 1010 6.7 × 10-12  
2.2 × 10-12  
1.0 × 109 9.0 × 109 4.5 × 1010  
5.0 × 10-13  
3
P2750-06  
*2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.  
*3: P3257-30/-31: λ =10.6 µm  
*4: P3257-30/-31: (800, 1200, 1)  
1
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