Datasheet > P2610BS

P2610BS

更新时间： 2024-11-18 17:15:31

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	388K
描述
TO-263

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中文翻译

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数据手册

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P2610BS 数据手册

P2610BS

TO-263

Halogen-Free & Lead-Free

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

36A

26.8mΩ

1: GATE

2: DRAIN

3: SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

100

Gate-Source Voltage

V_GS

±20

T_C= 25 ° C

Continuous Drain Current

I_D

T_C= 100 ° C

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 0.1mH

T_C= 25 ° C

T_C= 100 ° C

E_AS

P_D

Power Dissipation

Junction & Storage Temperature Range

T_J, T_stg

-55 to 150

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

° C / W

Junction-to-Ambient

Junction-to-Case

62.5

1.5

R_JC

¹Pulse width limited by maximum junction temperature.

.ELECTRICAL CHARACTERISTICS (T_J= 25 ° C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

100

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_DS= 0V, V_GS= ±20V

V_DS= 80V, V_GS= 0V

1.3 1.8

2.3

±100

A

Zero Gate Voltage Drain Current

I_DSS

V_DS= 80V, V_GS= 0V, T_J= 125 ° C

V_GS= 4.5V, I_D= 10A

Drain-Source On-State

Resistance¹

mΩ

R_DS(ON)

V_GS=10V, I_D= 10A

22 26.8

D-47-1

REV 1.0

12 3 4

中文翻译

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