Datasheet > P1308ATG

P1308ATG

更新时间： 2024-11-18 03:44:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	86K
描述
N-Channel Enhancement Mode Field Effect Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

P1308ATG 数据手册

N-Channel Enhancement Mode Field

Effect Transistor

P1308ATG

TO-220

NIKO-SEM

Lead Free

PRODUCT SUMMARY

1. GATE

2. DRAIN

3. SOURCE

V_(BR)DSS

R_DS(ON)

I_D

80A

13mΩ

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

UNITS

V_GS

±20

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

Avalanche Current

I_DM

I_AR

250

Avalanche Energy

Repetitive Avalanche Energy²

L = 0.55mH

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

E_AS

E_AR

400

192

Power Dissipation

P_D

Operating Junction & Storage Temperature Range

Lead Temperature (¹/₁₆” from case for 10 sec.)

T_j, T_stg

T_L

-55 to 150

275

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

SYMBOL

TYPICAL

MAXIMUM

UNITS

0.65

62.5

R_θJC

R_θJA

R_θCS

Junction-to-Ambient

°C / W

Case-to-Heatsink

0.5

¹Pulse width limited by maximum junction temperature.

²Duty cycle ≤ 1％

ELECTRICAL CHARACTERISTICS (T_C= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

STATIC

_GS= 0V, I_D= 250µA

_DS= V_GS, I_D= 250µA

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

1.5 2.3

4.0

V_DS= 0V, V_GS= ±20V

V_DS= 60V, V_GS= 0V

±250 nA

Zero Gate Voltage Drain Current

I_DSS

µA

V_DS= 60V, V_GS= 0V, T_J= 125 °C

Jun-09-2006

12 3 4 5

中文翻译

下载PDF

与P1308ATG相关器件

型号	品牌	获取价格	描述	数据表
P-1308-CEA(09)	HRS	获取价格	Rectangular Connector, 8 Contact(s), Male, 0.138 inch Pitch, Plug
P-1308-CTA(09)	HRS	获取价格	Rectangular Connector, 8 Contact(s), Male, 0.138 inch Pitch, Plug
P-1308-SB(09)	HRS	获取价格	Rectangular Connector, 8 Contact(s), Male, 0.138 inch Pitch, Plug
P130NH02L	STMICROELECTRONICS	获取价格	N-CHANNEL 24V - 0.0034 з - 120A DPAK/TO-220
P131	INFINEON	获取价格	PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
P131	VISHAY	获取价格	Passivated Assembled Circuit Elements, 25 A
P1-31	ETC	获取价格	AMPLIFIER OUTPUT PHOTO IC
P131.K	VISHAY	获取价格	Silicon Controlled Rectifier, 400V V(DRM), 400V V(RRM), 4 Element, ROHS COMPLIANT, PACE-PA
P-1310-CEA(09)	HRS	获取价格	Rectangular Connector, 20 Contact(s), Male, 0.138 inch Pitch, Plug
P13-1123	HARWIN	获取价格	1.27mm MIN. CENTRE TWO-PIECE SPRING PROBE