Datasheet > P0903BDG

P0903BDG

更新时间： 2024-11-21 05:58:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	286K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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数据手册

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P0903BDG 数据手册

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P0903BDG

TO-252 (DPAK)

Lead-Free

NIKO-SEM

PRODUCT SUMMARY

1. GATE

2. DRAIN

3. SOURCE

V_(BR)DSS

R_DS(ON)

I_D

50A

9.5mΩ

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

UNITS

V_GS

±20

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

Avalanche Current

I_DM

I_AR

200

Avalanche Energy

Repetitive Avalanche Energy²

L = 0.1mH

L = 0.05mH

T_C= 25 °C

T_C= 100 °C

E_AS

E_AR

250

8.6

Power Dissipation

P_D

Operating Junction & Storage Temperature Range

Lead Temperature (¹/₁₆” from case for 10 sec.)

T_j, T_stg

T_L

-55 to 150

275

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

SYMBOL

TYPICAL

MAXIMUM

UNITS

2.5

R_θJC

R_θJA

R_θCS

Junction-to-Ambient

62.5

°C / W

Case-to-Heatsink

0.6

¹Pulse width limited by maximum junction temperature.

²Duty cycle ≤ 1％

ELECTRICAL CHARACTERISTICS (T_C= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

STATIC

_GS= 0V, I_D= 250µA

_DS= V_GS, I_D= 250µA

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

1.6

V_DS= 0V, V_GS= ±20V

V_DS= 20V, V_GS= 0V

±250 nA

Zero Gate Voltage Drain Current

I_DSS

µA

_DS= 20V, V_GS= 0V, T_C= 125 °C

250

SEP-24-2004

12 3 4 5

中文翻译

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