生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-MUPM-H3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 其他特性: | HIGH RELIABILITY |
标称电路换相断开时间: | 40 µs | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 200 V/us | 最大直流栅极触发电流: | 200 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 600 mA |
JESD-30 代码: | O-MUPM-H3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
认证状态: | Not Qualified | 最大均方根通态电流: | 175 A |
重复峰值关态漏电流最大值: | 20000 µA | 断态重复峰值电压: | 600 V |
重复峰值反向电压: | 600 V | 表面贴装: | NO |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P086PH06F2K0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-209AC | |
P086PH06F2KO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element | |
P086PH06FG | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element | |
P086PH06FG0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175000mA I(T), 600V V(DRM) | |
P086PH06FH | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175 A, 600 V, SCR | |
P086PH06FJ | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175 A, 600 V, SCR | |
P086PH06FJ0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175000mA I(T), 600V V(DRM) | |
P086PH06FJO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175 A, 600 V, SCR | |
P086PH08C2K0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,800V V(DRM),175A I(T),TO-209AC | |
P086PH08C2KO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element |