Datasheet > OPE5985

OPE5985

更新时间： 2024-01-20 13:59:31

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描述
High Speed GaAlAs Infrared Emitter

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OPE5985 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.67	Is Samacsys：	N
Base Number Matches：	1

OPE5985 数据手册

High Speed GaAlAs Infrared Emitter

OPE5985

The OPE5985 is GaAlAs infrared emitting diode

that is designed for high power, low forward

voltage and high speed rise / fall time.

DIMENSIONS(Unit : mm)

3.0

This device is optimized for speed and efficiency

at emission wavelength 850nm and has a high radiant

efficiency over a wide range of forward current.

This device is packaged T1 package

and has wide beam angle with lensed package

and cup frame. Especially this device is suited

as the emitter of data transmission without cable.

FEATURES

• High speed : 25ns rise time

• 850nm wavelength

2-ꢀ0.5

• Wide beam angle

• Low forward voltage

• High power and high reliability

• Available for pulse operating

ꢀ ꢁ

2.5

APPLICATIONS

• Emitter of IrDA

ꢀ Anode

• IR Audio and Telephone

• High speed IR communication

• IR LANs

ꢁ Cathode

Tolerance : 0.2mm

• Available for wireless digital data transmission

STORAGE

• Condition : 5°C~35°C,R.H.60%

• Terms : within 3 months from production date

• Remark : Once the package is opened, the products should be used within a day.

Otherwise, it should be keeping in a damp proof box with desiccants.

* Please take proper steps in order to secure reliability and safety in required conditions

and environments for this device.

MAXIMUM RATINGS

Item

(Ta=25ꢀ)

Symbol

P_Dꢀ

Rating

Unit

Power Dissipation

Forward current

ꢁꢂꢃ

ꢁꢄꢃ

Aꢃ

ꢅꢃ

I_Fꢀ

ꢀꢀꢀꢀꢀꢀ

Pulse forward current

Reverse voltage

I_FPꢀ

V_Rꢀ

Topr.

Tsol.

0.5

5.0

Operating temp.

-20~ +70

ꢀ

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀʭ2

240

Soldering temp.

ꢀ

^ʭ1.Duty ratio = 1/100, pulse width=0.1ms.

^ʭ2.Lead Soldering Temperature (2mm from case for 5sec.).

ELECTRO-OPTICAL CHARACTERISTICS

(Ta=25ꢀ)

Item

Symbol

V_Fꢃ

I_Rꢃ

Conditions

I_F=50ꢁꢄꢃ

V_R=5Vꢃ

Min.

Typ.

1.5

ꢃ

Max.

2.0

Unit

Forward voltage

Reverse current

Capacitance

ꢃ

ꢆꢃ

ꢀꢁ

f=1ꢂꢃꢄ

ꢃ

850

ꢄꢃꢇꢈꢉꢊ

B Rank

C Rank

ꢋꢌꢃ

ʲʲꢃ

ꢃ

Radiant intensity

I =50ꢁꢄ

ꢁꢂ/ꢍ

ꢃ

Peak emission wavelength

Spectral bandwidth 50%

Half angle

ꢎ ꢃ

I_F=50ꢁꢄꢃ

ꢃ

ꢅꢆꢁ

ꢏꢎꢃ

ꢏꢑ

tr/tf

I_F=50ꢐꢃ

I_F=40ꢐꢃ

I_F=50ꢐꢃ

ꢃ

25/13

ꢃ

deg.

Optical rise & fall time(10%~90%)

ꢃ

I_Fʺʲꢌꢁꢄꢃꢒꢓꢃ

Cut off frequency

^*3. 10logPo(fc MHz)/Po(0.1 MHz)=-3

ꢃ

MHz

ʮꢔꢌꢁꢄꢃꢕʰꢕꢃ

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