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OPA4388IDR PDF预览

OPA4388IDR

更新时间: 2023-09-03 20:28:25
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管运算放大器
页数 文件大小 规格书
46页 3275K
描述
四路、10MHz、CMOS、零漂移、零交叉、真 RRIO 精密运算放大器 | D | 14 | -40 to 125

OPA4388IDR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SOIC-14
Reach Compliance Code:compliantFactory Lead Time:6 weeks
风险等级:1.75放大器类型:OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB):0.0007 µA最小共模抑制比:102 dB
标称共模抑制比:110 dB最大输入失调电压:8 µV
JESD-30 代码:R-PDSO-G14JESD-609代码:e4
长度:8.65 mm湿度敏感等级:2
负供电电压上限:-3 V标称负供电电压 (Vsup):-2.5 V
功能数量:4端子数量:14
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
座面最大高度:1.75 mm标称压摆率:5 V/us
子类别:Operational Amplifier最大压摆率:9.6 mA
供电电压上限:3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
标称均一增益带宽:10000 kHz宽度:3.9 mm
Base Number Matches:1

OPA4388IDR 数据手册

 浏览型号OPA4388IDR的Datasheet PDF文件第4页浏览型号OPA4388IDR的Datasheet PDF文件第5页浏览型号OPA4388IDR的Datasheet PDF文件第6页浏览型号OPA4388IDR的Datasheet PDF文件第8页浏览型号OPA4388IDR的Datasheet PDF文件第9页浏览型号OPA4388IDR的Datasheet PDF文件第10页 
OPA388, OPA2388, OPA4388  
ZHCSFU1D DECEMBER 2016 REVISED JULY 2020  
www.ti.com.cn  
6.5 Thermal Information: OPA2388  
OPA2388  
THERMAL METRIC(1)  
D (SOIC)  
8 PINS  
120.0  
52.3  
DGK (VSSOP)  
UNIT  
8 PINS  
165  
53  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
65.6  
87  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
9.6  
4.9  
ΨJT  
64.4  
85  
ΨJB  
RθJC(bot)  
N/A  
N/A  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
6.6 Thermal Information: OPA4388  
OPA4388  
THERMAL METRIC(1)  
D (SOIC)  
14 PINS  
86.4  
PW (TSSOP)  
14 PINS  
109.6  
27.4  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
46.3  
41.0  
56.1  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
11.3  
1.5  
ΨJT  
40.7  
54.9  
ΨJB  
RθJC(bot)  
N/A  
N/A  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
6.7 Electrical Characteristics: VS = ±1.25 V to ±2.75 V (VS = 2.5 to 5.5 V)  
at TA = 25°C, VCM = VOUT = VS / 2, and RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
OFFSET VOLTAGE  
OPA388, OPA2388  
±0.25  
±2.25  
±5  
±8  
VS = 5.5 V  
OPA4388  
VOS  
Input offset voltage  
µV  
OPA388, OPA2388  
OPA4388  
±7.5  
±10.5  
±0.05  
±0.05  
±1  
TA = 40°C to +125°C  
TA = 40°C to +125°C, VS = 5.5 V  
TA = 40°C to +125°C  
TA = 40°C to +125°C, VS = 5.5 V  
OPA388, OPA2388  
OPA4388  
±0.005  
±0.005  
±0.1  
dVOS/dT Input offset voltage drift  
µV/°C  
µV/V  
OPA388, OPA2388  
OPA4388  
Power-supply rejection  
PSRR  
ratio  
TA = 40°C to +125°C  
±1.25  
±3.5  
Copyright © 2020 Texas Instruments Incorporated  
Submit Document Feedback  
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Product Folder Links: OPA388 OPA2388 OPA4388  
 
 
 
 
 

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