Datasheet > OM75N06NK

OM75N06NK

更新时间： 2024-11-24 23:24:15

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
3页	33K
描述
60V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

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中文翻译

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数据手册

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OM75N06NK 数据手册

OM60N10NK (TC = 25°C unless otherwise specified)

OM55N10NK (TC = 25°C unless otherwise specified)

Avalanche Characteristics

Min. Typ. Max. Units Test Conditions

Avalanche Characteristics

Min. Typ. Max. Units Test Conditions

I_AR

Avalanche Current

(repetitive or

I_AR

Avalanche Current

(repetitive or

non-repetitive,T_J= 25°C)

E_AS

E_AR

I_AR

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

Avalanche Current

720 mJ (starting T_J= 25°C,

I_D= I_AR, V_DD= 25 V)

100 mJ (pulse width limited

by T_jmax, d< 1%)

E_AS

E_AR

I_AR

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

Avalanche Current

600 mJ (starting T_J= 25°C,

I_D= I_AR, V_DD= 25 V)

100 mJ (pulse width limited

by T_jmax, d< 1%)

(repetitive or

non-repetitive, T_J= 100°C)

(repetitive or

non-repetitive, T_J= 100°C)

Electrical Characteristics - OFF

V_(BR)DSSDrain-Source

Electrical Characteristics - OFF

V_(BR)DSSDrain-Source

100

I_D= 250 µA, V_GS= 0

100

I_D= 250 µA, V_GS= 0

Breakdown Voltage

I_DSS

I_GSS

Zero Gate Voltage

Drain Current (V_GS= 0)

Gate-Body Leakage

Current (V_DS= 0)

250 µA V_DS= Max. Rat.

1000 µA V_DS= Max. Rat. x 0.8, T_C= 125°C

±100 nA V_GS= ±20 V

I_DSS

I_GSS

Zero Gate Voltage

Drain Current (V_GS= 0)

Gate-Body Leakage

Current (V_DS= 0)

250 µA V_DS= Max. Rat.,

1000 µA V_DS= Max. Rat. x 0.8, T_C= 125°C

±100 nA V_GS= ±20 V

Electrical Characteristics - ON*

V_GS(th)Gate Threshold Voltage

R_DS(on)Static Drain-Source On

Resistance

Electrical Characteristics - ON*

V_GS(th)Gate Threshold Voltage

R_DS(on)Static Drain-Source On

Resistance

V_DS= V_GS, I_D= 250 µA

V_GS= 10 V, I_D= 30 A

T_C= 100°C

0.03

0.06

V_DS= V_GS, I_D= 250 µA

V_GS= 10 V, I_D= 30 A

T_C= 100°C

0.025

0.05

I_D(on)

On State Drain Current

V_DS> I_D(on)x R_DS(on)max, V_GS= 10 V

I_D(on)

On State Drain Current

V_DS> I_D(on)x R_DS(on)max, V_GS= 10 V

Electrical Characteristics - Dynamic

g_fs

Forward Transductance

Input Capacitance

Output Capacitance

V_DS> I_D(on)x R_DS(on)max, I_D= 30 A

g_fs

Forward Transductance

Input Capacitance

Output Capacitance

V_DS> I_D(on)x R_DS(on)max, I_D= 30 A

4000

1100

250

pF V_DS= 25 V

pF V_GS= 0

pF f = 1 mHz

4000

1100

250

pF V_DS= 25 V

pF V_GS= 0

pF f = 1 mHz

ies

C_oes

C_res

C_oes

C_res

Reverse Transfer Capacitance

Electrical Characteristics - Switching On

T_d(on)

t_r

Turn-On Time

Rise Time

270

nS V_DD= 80 V, I_D= 30 A

nS R_G= 50 , V_GS= 10 V

A/µS V_DD= 80 V, I_D= 30 A

R_G= 50 , V_GS= 10 V

T_d(on)

t_r

Turn-On Time

Rise Time

270

nS V_DD= 80 V, I_D= 30 A

nS R_G= 50 , V_GS= 10 V

A/µS V_DD= 80 V, I_D= 30 A

R_G= 50 , V_GS= 10 V

(di/dt)_onTurn-On Current Slope

Q_g

Total Gate Charge

120

nC V_DD= 80 V, I_D= 30 A, V_GS= 10 V

Q_g

Total Gate Charge

120

nC V_DD= 80 V, I_D= 30 A, V_GS= 10 V

Electrical Characteristics - Switching Off

T_r(Voff)

t_f

t_cross

Off Voltage Rise Time

Fall Time

Cross-Over Time

200

210

410

nS V_DD= 80 V, I_D= 30 A

nS R_G= 50 , V_GS= 10 V

T_r(Voff)

t_f

t_cross

Off Voltage Rise Time

Fall Time

Cross-Over Time

200

210

410

nS V_DD= 80 V, I_D= 30 A

nS R_G= 50 , V_GS= 10 V

Electrical Characteristics - Source Drain Diode

I_SD

Source Drain Current

Source Drain Current (pulsed)

Forward On Voltage

240

1.6

I_SD

Source Drain Current

Source Drain Current (pulsed)

Forward On Voltage

180

1.5

I_SDM

V_SD

t_rr

I_SDM

V_SD

t_rr

I_SD= 60 A, V_GS= 0

I_SD= 55 A, V_GS= 0

Reverse Recovery Time

180

nS I_SD= 60 A, di/dt = 100 A/µs

Reverse Recovery Time

180

nS I_SD= 55 A, di/dt = 100 A/µs

V_R= 80 A

Q_rr

I_RRM

Reverse Recovery Charge

Reverse Recovery Current

1.8

µC

Q_rr

I_RRM

Reverse Recovery Charge

Reverse Recovery Current

1.8

µC

*Pulse Test: Pulse width < 300µsec, Duty Cycle 1.5%.

12 3

中文翻译

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与OM75N06NK相关器件

型号	品牌	获取价格	描述	数据表
OM75N06NKT	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
OM75N06SA	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, P-Channel, Silicon, Met
OM75N06SC	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 60V, 0.016ohm, 1-Element, P-Channel, Silicon, Met
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OM75N10SAT	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide S
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