Datasheet > NXV08H250DT1

NXV08H250DT1

更新时间： 2023-09-03 20:30:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	708K
描述
Dual Half Bridge Automotive Power MOSFET MODULE

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NXV08H250DT1 数据手册

DATA SHEET

www.onsemi.com

Automotive Power MOSFET

Module

NXV08H250DT1

Features

• 2 Phase MOSFET Module

APM17−MDC

CASE MODHH

At Customer Side this Module Can Be Used as 1/2 Bridge MOSFET

Module by Combining 2 Phase Out Power Terminals

• Electrically Isolated DBC Substrate for Low Rthjc

• Compact Design for Low Total Module Resistance

• Module Serialization for Full Traceability

MARKING DIAGRAM

• Module Level AQG324 Qualified. Components Inside are

AEC Q101 (MOSFET) & AEC Q200 (Passives) Qualified

• UL 94 V−0 Compliant

NXV08H250DT1

ZZZ ATYWW

NNNNNN

• This Device is Pb−Free and is RoHS Compliant

• ESD Tested for HBM and CDM per AEC Q101, JS−001, JS−002

Applications

• 48 V Inverter, 48 V Traction

NXV08H250DT1 = Specific Device Code

ZZZ

= Lot ID

= Assembly & Test Location

= Year

Benefits

• Enable Design of Small, Efficient and Reliable System for Reduced

NNN

= Work Week

= Serial Number

Vehicle Fuel Consumption and CO Emission

• Simplified Vehicle Assembly

• Low Thermal Resistance to Junction to Heat Sink by Direct

Mounting via Thermal Interface Material between Module Case and

Heat Sink

ORDERING INFORMATION

See detailed ordering and shipping information on page 2

of this data sheet.

• Low Inductance

Publication Order Number:

January, 2023 − Rev. 2

NXV08H250DT1/D

12 3 4 5 6 7...10

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