Datasheet > NXV08H400XT1

NXV08H400XT1

更新时间： 2023-09-03 20:38:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	745K
描述
汽车双半桥功率MOSFET

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中文翻译

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数据手册

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NXV08H400XT1 数据手册

DATA SHEET

www.onsemi.com

Automotive Power MOSFET

Module

NXV08H400XT1

Features

• 2 Phase MOSFET Module

At Customer Side this Module Can Be Used as 1/2 Bridge MOSFET

Module by Combining 2 Phase Out Power Terminals

• Electrically Isolated DBC Substrate for Low Rthjc

APM17−MDC

CASE MODHH

• Compact Design for Low Total Module Resistance

• Module Serialization for Full Traceability

MARKING DIAGRAM

• Module Level AQG324 Qualified. Components Inside are

AEC Q101 (MOSFET) & AEC Q200 (Passives) Qualified

• UL 94 V−0 Compliant

• This Device is Pb−Free and is RoHS Compliant

NXV08H400XT1

ZZZ ATYWW

NNNNNN

Applications

• 48 V Inverter, 48 V Traction

NXV08H400XT1 = Specific Device Code

Benefits

ZZZ

= Lot ID

= Assembly & Test Location

= Year

• Enable Design of Small, Efficient and Reliable System for Reduced

Vehicle Fuel Consumption and CO Emission

NNN

= Work Week

= Serial Number

• Simplified Vehicle Assembly

• Low Thermal Resistance to Junction to Heat Sink by Direct

Mounting via Thermal Interface Material between Module Case and

Heat Sink

• Low Inductance

ORDERING INFORMATION

See detailed ordering and shipping information on page 2

of this data sheet.

Publication Order Number:

January, 2023 − Rev. 2

NXV08H400XT1/D

12 3 4 5 6 7...10

中文翻译

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