Datasheet > NX1029X

NX1029X

更新时间： 2024-11-29 11:15:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
19页	308K
描述
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFETProduction

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NX1029X 数据手册

NX1029X

60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET

28 December 2022

Product data sheet

1. General description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small

and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

•

Logic-level compatible

•

Very fast switching

Trench MOSFET technology

ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)

3. Applications

•

Level shifter

Power supply converter

Loadswitch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel)

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-20

V_GS= 10 V; T_amb= 25 °C

[1]

330

TR1 (N-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 500 mA; pulsed; t_p≤

300 µs; δ ≤ 0.01; T_j= 25 °C

1.6

TR2 (P-channel)

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-50

-20

V_GS= -10 V; T_amb= 25 °C

V_GS= -10 V; I_D= -100 mA; T_j= 25 °C

[1]

-170

TR2 (P-channel), Static characteristics

R_DSon

drain-source on-state

resistance

4.5

7.5

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

12 3 4 5 6 7...19

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