Datasheet > NVF5P03T3G

NVF5P03T3G

更新时间： 2024-11-30 12:27:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	150K
描述
Power MOSFET 5.2 A, 30 V

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中文翻译

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技术参数
数据手册

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NVF5P03T3G 技术参数

是否无铅：	不含铅	生命周期：	Not Recommended
包装说明：	,	针数：	4
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
风险等级：	7.73	JESD-609代码：	e3
湿度敏感等级：	1	端子面层：	Tin (Sn)
Base Number Matches：	1

NVF5P03T3G 数据手册

NTF5P03T3G, NVF5P03T3G

Power MOSFET

5.2 A, 30 V

P−Channel SOT−223

http://onsemi.com

Features

• Ultra Low R

DS(on)

5.2 AMPERES, 30 VOLTS

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

R_DS(on)= 100 mW

• Miniature SOT−223 Surface Mount Package

• Avalanche Energy Specified

• AEC−Q101 Qualified and PPAP Capable − NVF5P03T3G

• These Devices are Pb−Free and are RoHS Compliant

Applications

• DC−DC Converters

• Power Management

• Motor Controls

• Inductive Loads

• Replaces MMFT5P03HD

P−Channel MOSFET

MARKING

DIAGRAM

& PIN

ASSIGNMENT

Drain

SOT−223

CASE 318E

STYLE 3

AYM

5P03 G

Gate Drain Source

= Assembly Location

= Year

= Date Code

5P03 = Specific Device Code

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

4000 / Tape &

Reel

SOT−223

(Pb−Free)

NTF5P03T3G

4000 / Tape &

Reel

SOT−223

(Pb−Free)

NVF5P03T3G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

October, 2011 − Rev. 5

NTF5P03T3/D

12 3 4 5 6 7

中文翻译

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