5秒后页面跳转
NTSB20120CT-1G PDF预览

NTSB20120CT-1G

更新时间: 2024-11-20 12:04:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 133K
描述
Very Low Forward Voltage Trench-based Schottky Rectifier

NTSB20120CT-1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-262AA包装说明:R-PSIP-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:2 weeks风险等级:1.65
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.72 VJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
最大非重复峰值正向电流:120 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:120 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NTSB20120CT-1G 数据手册

 浏览型号NTSB20120CT-1G的Datasheet PDF文件第2页浏览型号NTSB20120CT-1G的Datasheet PDF文件第3页浏览型号NTSB20120CT-1G的Datasheet PDF文件第4页浏览型号NTSB20120CT-1G的Datasheet PDF文件第5页浏览型号NTSB20120CT-1G的Datasheet PDF文件第6页浏览型号NTSB20120CT-1G的Datasheet PDF文件第7页 
NTST20120CT,  
NTSJ20120CTG,  
NTSB20120CT-1G,  
NTSB20120CTG,  
NTSB20120CTT4G  
http://onsemi.com  
Very Low Forward Voltage  
Trench-based Schottky  
Rectifier  
VERY LOW FORWARD  
VOLTAGE, LOW LEAKAGE  
SCHOTTKY BARRIER  
RECTIFIERS 20 AMPERES,  
120 VOLTS  
Exceptionally Low VF = 0.54 V at IF = 5 A  
Features  
Fine Lithography Trenchbased Schottky Technology for Very Low  
Forward Voltage and Low Leakage  
PIN CONNECTIONS  
1
Fast Switching with Exceptional Temperature Stability  
Low Power Loss and Lower Operating Temperature  
Higher Efficiency for Achieving Regulatory Compliance  
Low Thermal Resistance  
High Surge Capability  
PbFree and HalideFree Packages are Available  
2, 4  
3
4
4
Typical Applications  
Switching Power Supplies including Notebook / Netbook Adapters,  
ATX and Flat Panel Display  
High Frequency and DCDC Converters  
Freewheeling and ORing diodes  
Reverse Battery Protection  
Instrumentation  
TO220AB  
CASE 221A  
STYLE 6  
I2PAK  
CASE 418D  
STYLE 3  
1
1
2
2
3
3
4
Mechanical Characteristics  
Case: Epoxy, Molded  
Epoxy Meets Flammability Rating UL 940 @ 0.125 in  
Finish: All External Surfaces Corrosion Resistant and Terminal  
TO220FP  
CASE 221AH  
D2PAK  
CASE 418B  
Leads are Readily Solderable  
1
2
Lead Temperature for Soldering Purposes: 260°C Maximum for  
10 sec  
3
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
January, 2013 Rev. 4  
NTST20120CT/D  

NTSB20120CT-1G 替代型号

型号 品牌 替代类型 描述 数据表
NTSB20120CTT4G ONSEMI

功能相似

Very Low Forward Voltage Trench-based Schottky Rectifier

与NTSB20120CT-1G相关器件

型号 品牌 获取价格 描述 数据表
NTSB20120CTG ONSEMI

获取价格

Very Low Forward Voltage Trench-based Schottky Rectifier
NTSB20120CTT4G ONSEMI

获取价格

Very Low Forward Voltage Trench-based Schottky Rectifier
NTSB20U100CT-1G ONSEMI

获取价格

Very Low Forward Voltage Trench-based Schottky
NTSB20U100CTG ONSEMI

获取价格

Very Low Forward Voltage Trench-based Schottky
NTSB20U100CTT4G ONSEMI

获取价格

Schottky Power Rectifier, Dual, 20 A, 100 V
NTSB30100CT-1G ONSEMI

获取价格

Very Low Forward Voltage Trench-based Schottky Rectifier
NTSB30100CTG ONSEMI

获取价格

Very Low Forward Voltage Trench-based Schottky Rectifier
NTSB30100CTT4G ONSEMI

获取价格

Very Low Forward Voltage Trench-based Schottky Rectifier
NTSB30100S-1G ONSEMI

获取价格

肖特基整流器,低正向电压,30 A,100 V
NTSB30120CT-1G ONSEMI

获取价格

Very Low Forward Voltage Trench-based Schottky Rectifier