NTHS4101PT1

更新时间： 2024-02-05 15:14:28

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
6页	59K
描述
Power MOSFET -20 V, 6.7 A, P-Channel ChipFET

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NTHS4101PT1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	LEAD FREE, CASE 1206A-03, CHIPFET-8
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	9 weeks	风险等级：	0.96
其他特性：	LOGIC LEVEL COMPATIBLE	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (Abs) (ID)：	4.8 A
最大漏极电流 (ID)：	4.8 A	最大漏源导通电阻：	0.034 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-XDSO-C8
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	2.5 W	最大脉冲漏极电流 (IDM)：	190 A
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

NTHS4101PT1 数据手册

NTHS4101P

Power MOSFET

−20 V, 6.7 A, P−Channel ChipFETt

Features

• Offers an Ultra Low R

Solution in the ChipFET Package

DS(on)

• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6

making it an Ideal Device for Applications where Board Space is at a

Premium

http://onsemi.com

DS(on)

TYP

I MAX

(BR)DSS

• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin

Environments such as Portable Electronics

21 mW @ −4.5 V

−20 V

30 mW @ −2.5 V

42 mW @ −1.8 V

−6.7 A

• Designed to Provide Low R

at Gate Voltage as Low as 1.8 V, the

DS(on)

Operating Voltage used in many Logic ICs in Portable Electronics

• Simplifies Circuit Design since Additional Boost Circuits for Gate

Voltages are not Required

• Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels using the same Basic Topology

• Pb−Free Package is Available

Applications

• Optimized for Battery and Load Management Applications in

Portable Equipment such as MP3 Players, Cell Phones, Digital

Cameras, Personal Digital Assistant and other Portable Applications

P−Channel MOSFET

• Charge Control in Battery Chargers

• Buck and Boost Converters

ChipFET

CASE 1206A

STYLE 1

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

MARKING

DIAGRAM

Drain−to−Source Voltage

−20

CONNECTIONS

DSS

Gate−to−Source Voltage − Continuous

"8.0

Drain Current − Continuous

− 5 seconds

−4.8

−6.7

Total Power Dissipation

Continuous @ T = 25°C

1.3

2.5

0.7

1.3

(5 sec) @ T = 25°C

Continuous @ 85°C

(5 sec) @ 85°C

C6 = Specific Device Code

M = Month Code

Pulsed Drain Current − t = 10 ms

−190

−4.8

= Pb−Free Package

Continuous Source Current

Thermal Resistance (Note 1)

Junction−to−Ambient, 5 sec

Junction−to−Ambient, Continuous

°C/W

ORDERING INFORMATION

†

Device

Package

Shipping

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

°C

NTHS4101PT1

ChipFET

3000 Tape / Reel

ChipFET

(Pb−free)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq

[1 oz] including traces).

NTHS4101PT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2007

Publication Order Number:

February, 2007 − Rev. 3

NTHS4101P/D

12 3 4 5 6

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