Datasheet > NTHS4111P

NTHS4111P

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	193K
描述
Power MOSFET -30 V, -6.1 A, Single P-Channel, ChipFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTHS4111P 数据手册

NTHS4111P

Power MOSFET

−30 V, −6.1 A, Single P−Channel, ChipFETt

Features

• Offers an Ultra Low R

Solution in the ChipFET Package

DS(on)

http://onsemi.com

• ChipFET Package 40% Smaller Footprint than TSOP−6

• Low Profile (<1.1 mm) for Extremely Thin Environments

• Standard Logic Level Gate Drive

Max

Typ

DS(on)

(BR)DSS

• Pb−Free Package is Available

33 mW @ −10 V

52 mW @ −4.5 V

−30 V

−6.1 A

Applications

• Notebook Computer Load Switch

• Battery and Load Management Applications in Portable Equipment

• Charge Control in Battery Chargers

• Buck and Boost Converters

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol Value

Unit

Drain−to−Source Voltage

Gate−to−Source Voltage

DSS

−30

±20

−4.4

−3.2

−6.1

1.3

P−Channel MOSFET

Continuous Drain

Current (Note 1)

Steady

State

T = 25°C

ChipFET

CASE 1206A

STYLE 1

T = 85°C

t ≤ 10 s T = 25°C

Power Dissipation

(Note 1)

T = 25°C

Steady

State

t ≤ 10 s

2.5

−3.3

−2.3

0.7

CONNECTIONS

MARKING

DIAGRAM

Continuous Drain

Current (Note 2)

Steady

State

T = 25°C

T = 85°C

Power Dissipation

(Note 2)

T = 25°C

Pulsed Drain Current

tp = 10 ms

−30

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

Source Current (Body Diode)

−2.1

Lead Temperature for Soldering Purposes

260

°C

(1/8″ from case for 10 s)

= Specific Device Code

= Date Code

= Pb−Free Package

THERMAL RESISTANCE RATINGS

Rating

Symbol

Max

Unit

(Note: Microdot may be in either location)

°C/W

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t ≤ 10 s (Note 1)

Junction−to−Ambient – Steady State (Note 2)

ORDERING INFORMATION

175

†

Device

Package

Shipping

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

NTHS4111PT1

ChipFET

3000/Tape & Reel

ChipFET

(Pb−free)

NTHS4111PT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

2. Surface−mounted on FR4 board using the minimum recommended pad size

(Cu area = 0.045 in sq).

Publication Order Number:

August, 2006 − Rev. 2

NTHS4111P/D

12 3 4 5 6

下载PDF

与NTHS4111P相关器件

型号	品牌	描述	获取价格	数据表
NTHS4111P_06	ONSEMI	Power MOSFET -30 V, -6.1 A, Single P-Channel, ChipFET	获取价格
NTHS4111PT1	ONSEMI	Power MOSFET -30 V, -6.1 A, Single P-Channel, ChipFET	获取价格
NTHS4111PT1G	ONSEMI	Power MOSFET -30 V, -6.1 A, Single P-Channel, ChipFET	获取价格
NTHS4166N	ONSEMI	Power MOSFET 30 V, 8.2 A, Single N-Channel, ChipFET Package	获取价格
NTHS4166NT1G	ONSEMI	Power MOSFET 30 V, 8.2 A, Single N-Channel, ChipFET Package	获取价格
NTHS4501N	ONSEMI	Power MOSFET 30 V, 6.7 A, Single N−Channel, ChipFET Package	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

NTHS4111P

NTHS4111P 数据手册

与NTHS4111P相关器件

与NTHS4111P相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTHS4111P

NTHS4111P 数据手册

与NTHS4111P相关器件

与NTHS4111P相关文章

您还可以找

您在本页遇到什么问题？