Datasheet > NTHS5404

NTHS5404

更新时间： 2022-12-12 09:46:06

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	61K
描述
Power MOSFET

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NTHS5404 数据手册

NTHS5404

Power MOSFET

20 V, 7.2 A, N−Channel ChipFETE

Features

• Low R

for Higher Efficiency

DS(on)

http://onsemi.com

• Logic Level Gate Drive

• Miniature ChipFET Surface Mount Package Saves Board Space

• Pb−Free Package is Available

TYP

I MAX

(BR)DSS

DS(on)

20 V

25 mW @ 4.5 V

7.2 A

Applications

• Power Management in Portable and Battery−Powered Products; i.e.,

Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Steady

State

Rating

Symbol 5 Secs

Unit

Drain−Source Voltage

Gate−Source Voltage

Continuous Drain Current

"12

N−Channel MOSFET

(T = 150°C) (Note 1)

7.2

5.2

3.8

T = 25°C

ChipFET

CASE 1206A

STYLE 1

T = 85°C

Pulsed Drain Current

"20

Continuous Source Current

(Diode Conduction) (Note 1)

7.2

5.2

MARKING

DIAGRAM

CONNECTIONS

Maximum Power Dissipation

(Note 1)

2.5

1.3

0.7

T = 25°C

T = 85°C

Operating Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

A2 = Specific Device Code

M = Month Code

1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

ORDERING INFORMATION

†

Device

Package

Shipping

NTHS5404T1

NTHS5404T1G

ChipFET

3000/Tape & Reel

ChipFET

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

October, 2004 − Rev. 3

NTHS5404T1/D

12 3 4 5 6

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