NSL21610/1
Datasheet (EN) 1.0
Parameters
Symbol
Condition
SW_SHUNT = (VIN − VSHUNT)/ISET, DEN
low, OUT pin floating, ISET = 100
mA
Min
Typ
Max
Unit
R
Ron of Switch FET in SHUNT
loop (NSL21610)
RSW_SHUNT
2.7
4.5
Ω
Channel open-load rising
threshold
VO PEN ,T H1
VO PEN ,T H2
VSHORT,TH1
VSHORT,TH2
IO/S_Retry
VFAU LT _IH
VFAU LT _IL
VFAULT_OH
VVS − VOUT
300
200
1.162
0.8
430
300
1.21
0.85
1
510
370
mV
mV
V
Channel open-load falling
threshold
VVS − VOUT
Channel short-to-ground rising
threshold
VOUT or VSHUNT
VOUT or VSHUNT
1.258
0.9
Channel short-to-ground
falling threshold
V
Channel open-load / short-to-
ground retry current
0.6
1.35
mA
V
FAULT logic input high
threshold
2
FAULT logic input low
threshold
0.7
5.5
V
FAULT logic output high
voltage
With 2μA external pulldown
current
4.9
V
FAULT logic output low voltage VFAULT_OL
With 2 mA external pullup current
0.45
20
V
FAULT internal pullup current
IFAULT_PU
IFAU LT _PD
IFAU LT _LKG
TSD
4
2
13
μA
FAULT internal pulldown
current
VFAU LT = 0.5 V
VFAU LT = 40 V
2.7
4
1
mA
μA
°C
FAULT leakage current
Device thermal shutdown
temperature
170
17
Device thermal shutdown
temperature hysteresis
THYST
°C
μs
Channel open-load / short-to-
ground deglitch time
tO/S_Deg
160
From PWM rising edge to 10% of
IOUT rising edge, VVS = 12 V, VOUT = 6
V, ISET = 100 mA
PWM rising delay time
PWM falling delay time
IOUT rising edge time
tPWM_D1
tPWM_D2
tIOUT_E1
5
5
μs
μs
μs
From PWM falling edge to 90% of
IOUT falling edge, VVS = 12 V, VOUT = 6
V, ISET = 100 mA
From 10% of IOUT rising edge to
90% of IOUT rising edge, VVS = 12 V,
VOUT = 6 V, ISET = 100 mA
3.4
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