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NSB1011XV6T5 PDF预览

NSB1011XV6T5

更新时间： 2024-02-20 06:54:26
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 97K
描述
Dual Bias Resistor Transistors

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中文翻译

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NSB1011XV6T5 技术参数

是否无铅： 不含铅生命周期：Obsolete
包装说明：LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN针数：6
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.56其他特性：BUILT IN BIAS RESISTOR RATIO 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：35
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

NSB1011XV6T5 数据手册

 浏览型号NSB1011XV6T5的Datasheet PDF文件第2页浏览型号NSB1011XV6T5的Datasheet PDF文件第3页浏览型号NSB1011XV6T5的Datasheet PDF文件第4页浏览型号NSB1011XV6T5的Datasheet PDF文件第5页浏览型号NSB1011XV6T5的Datasheet PDF文件第6页 
NSB1011XV6T5  
Preferred Device  
Dual Bias Resistor  
Transistors  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSB1011XV6T5, two  
BRT devices are housed in the SOT−563 package which is ideal for  
low power surface mount applications where board space is at a  
premium.  
(3)  
(2)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
• Simplifies Circuit Design  
• Reduces Board Space  
4
5
• Reduces Component Count  
6
• This device is manufactured with a Pb−Free external lead finish only.  
3
2
1
SOT−563  
CASE 463A  
PLASTIC  
MAXIMUM RATINGS  
A
(T = 25°C unless otherwise noted, common for Q and Q )  
1
2
Rating  
Symbol  
Value  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
V
50  
50  
CBO  
CEO  
MARKING DIAGRAM  
Vdc  
I
100  
mAdc  
C
UT D  
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
UT = Specific Device Code  
(see table on following page)  
= Date Code  
Total Device Dissipation  
P
D
D
T = 25°C  
357 (Note 1)  
2.9 (Note 1)  
mW  
mW/°C  
A
Derate above 25°C  
ORDERING INFORMATION  
Thermal Resistance −  
R
q
JA  
350 (Note 1)  
°C/W  
Junction-to-Ambient  
†
Device  
Package  
Shipping  
Characteristic  
(Both Junctions Heated)  
NSB1011XV6T5 SOT−563 8000 / Tape & Reel  
(Pb−Free)  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
T = 25°C  
Derate above 25°C  
500 (Note 1)  
4.0 (Note 1)  
mW  
mW/°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
A
Thermal Resistance −  
Junction-to-Ambient  
R
q
JA  
250 (Note 1)  
°C/W  
Junction and Storage  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. FR−4 @ Minimum Pad.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 − Rev. 0  
NSB1011XV6/D  
 
123456

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