Datasheet > 晶体管 > 小信号双极晶体管> NSB13211DW6T1G

NSB13211DW6T1G

更新时间： 2024-02-06 18:04:13

品牌	Logo	应用领域
安森美 - ONSEMI		晶体小信号双极晶体管开关光电二极管
页数	文件大小	规格书
4页	72K
描述
Dual Complementary Bias Resistor Transistors

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技术参数
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NSB13211DW6T1G 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
零件包装代码：	SC-88	包装说明：	LEAD FREE, CASE 419B-02, SC-88, 6 PIN
针数：	6	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.48	Is Samacsys：	N
其他特性：	BUILT IN BIAS RESISTANCE RATIO IS 1	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	35	JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	2	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN AND PNP	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

NSB13211DW6T1G 数据手册

NSB13211DW6T1G

Dual Complementary Bias

Resistor Transistors

Complementary BRTs with Monolithic

Bias Network

http://onsemi.com

NSB13211DW6T1G contains a single PNP bias resistor transistor

and a single NPN bias resistor transistor with a monolithic bias

network; a series base resistor and a base-emitter resistor. This device

is designed to replace multiple transistors and resistors on customer

boards by integrating these components into a single device.

NSB13211DW6T1G is housed in a SC-88/SOT-363 package

which is ideal for low power surface mount applications in space

constrained applications.

PNP and NPN SILICON

BIAS RESISTOR

TRANSISTORS

(3)

(2)

(1)

Features

•ꢀSimplifies Circuit Design

•ꢀReduces Board Space

•ꢀReduces Component Count

•ꢀQ1: PNP BRT, R1 = R2 = 4.7 k

•ꢀQ2: NPN BRT, R3 = R4 = 10 k

•ꢀThis is a Pb-Free Device

(4)

(5)

(6)

Applications

•ꢀLogic Switching

•ꢀAmplification

•ꢀDriver Circuits

•ꢀInterface Circuits

SC-88/SOT-363

CASE 419B

STYLE 1

MARKING DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q

and Q , - minus sign for Q (PNP) omitted)

Rating

Collector‐Base Voltage

Symbol

Value

ā50

Unit

Vdc

N3 M G

CBO

CEO

Collector‐Emitter Voltage

Collector Current

ā50

Vdc

100

mAdc

= Device Code

= Date Code*

= Pb-Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

NSB13211DW6T1G SC-88

(Pb-Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

March, 2008 - Rev. 0

Publication Order Number:

NSB13211DW6/D

12 3 4

中文翻译

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