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NSB1706DMW5T1 PDF预览

NSB1706DMW5T1

更新时间： 2024-01-31 05:07:33
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
3页 50K
描述
Dual Bias Resistor Transistor

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中文翻译

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NSB1706DMW5T1 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SC-70包装说明：CASE 419A-02, SC-88A, SC-70, 5 PIN
针数：5Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.53
其他特性：BUILT IN BIAS RESISTOR RATIO IS 10最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-G5
JESD-609代码：e0湿度敏感等级：1
元件数量：2端子数量：5
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：NPN最大功率耗散 (Abs)：0.385 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NSB1706DMW5T1 数据手册

 浏览型号NSB1706DMW5T1的Datasheet PDF文件第2页浏览型号NSB1706DMW5T1的Datasheet PDF文件第3页 
NSB1706DMW5T1  
Dual Bias Resistor  
Transistor  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSB1706DMW5T1, two  
BRT devices are housed in the SC−88A package which is ideal for low  
power surface mount applications where board space is at a premium.  
(5)  
Q1  
(4)  
Q2  
R2  
R2  
Features  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Pb−Free Package is Available  
R1  
R1  
(1)  
(2)  
(3)  
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
1
2
Rating  
Symbol  
Value  
50  
Unit  
Vdc  
1
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
V
CBO  
CEO  
50  
Vdc  
SC−88A  
CASE 419A  
STYLE 1  
I
100  
mAdc  
C
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
MARKING DIAGRAM  
Total Device Dissipation  
P
187 (Note 1)  
256 (Note 2)  
1.5 (Note 1) mW/°C  
2.0 (Note 2)  
mW  
D
T = 25°C  
A
Derate above 25°C  
U6 M G  
Thermal Resistance, Junction-to-Ambient  
R
q
JA  
670 (Note 1)  
490 (Note 2)  
°C/W  
G
1
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
U6 = Device Marking  
Total Device Dissipation  
P
250 (Note 1)  
385 (Note 2)  
2.0 (Note 1) mW/°C  
3.0 (Note 2)  
mW  
D
M
= Date Code  
T = 25°C  
A
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Derate above 25°C  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Lead  
Junction and Storage Temperature  
R
493 (Note 1)  
325 (Note 2)  
°C/W  
°C/W  
°C  
q
JA  
ORDERING INFORMATION  
†
R
188 (Note 1)  
208 (Note 2)  
q
JL  
Device  
Package  
Shipping  
NSB1706DMW5T1  
SC−88A 3000/Tape & Reel  
T , T  
J
−55 to +150  
stg  
NSB1706DMW5T1G SC−88A 3000/Tape & Reel  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR−4 @ Minimum Pad.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. FR−4 @ 1.0 x 1.0 inch Pad.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 3  
NSB1706DMW5T1/D  
 
123

中文翻译

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NSB1706DMW5T1 替代型号

型号 品牌 替代类型 描述 数据表
NSB1706DMW5T1G ONSEMI

类似代替

 Dual Bias Resistor Transistor
RN1704 TOSHIBA

功能相似

 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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